Buch, Englisch, 360 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 640 g
Buch, Englisch, 360 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 640 g
ISBN: 978-0-12-396489-2
Verlag: William Andrew Publishing
Zielgruppe
Physicists, solid state scientists, device engineers, semiconductor researchers, materials scientists and industrial practitioners.
Fachgebiete
Weitere Infos & Material
- Theory and Modeling of Oxide Semiconductors
John L. Lyons, Anderson Janotti and Chris G. Van de Walle
- Open Volume Defects: Positron Annihilation Spectroscopy
Filip Tuomisto
- Bulk Growth and Impurities
Lasse Vines and Andrej Kuznetsov
- Surfaces and Interfaces of Zinc Oxide
Leonard J. Brillson
- Transparent Conductive Oxides for Transparent Electrode Applications
Tadatsugu Minami
- The Physics of Copper Oxide (Cu2O)
Bruno K. Meyer, A. Polity, D. Reppin, M. Becker, P. Hering, B. Kramm, P.J. Klar, Th. Sander, C. Reindl, C. Heiliger, M. Heinemann, C. Müller and C. Ronning
- Transition Metal-Doped Magnetic Oxides
Cheng Song and Feng Pan
- Semiconducting Metal Oxides Based Gas Sensors
Katharina Grossmann, Udo Weimar and Nicolae Barsan
- Oxide Thin-Film Transistors - Device PhysicsJohn F. Wager and Bao Yeh