A Bibliography of Fabrication Technology, Properties, and Applications
Buch, Englisch, 944 Seiten, Format (B × H): 178 mm x 254 mm, Gewicht: 1786 g
ISBN: 978-1-4684-6092-6
Verlag: Springer
Since the advent of planar technology the literature on semi conductor devices has been growing exponentially. This book of over 14000 references is intended to make the world literature available to workers in the field (beginners as well as experienced) to assist them in finding out what has been done by others in their fields of endeavor. The literature on theory, preparation, properties, character ization, packaging, instrumentation and applications of semiconductor devices is thoroughly covered; the only aspect of preparation not covered is di ffusion. However, several books and comprehensive review articles on this subject are given in Chapter A. Radiation damage due to ion implantation is given in Chapter F. Radiation damage due to all other types of radiations is given in Chapter J. The chapters on processing technology, radiation damage, structural defects and analysis, modeling and packaging are quite general and apply to most types of semiconductor devices. Special attention is given to electrical properties and applications of FET, Schottky and charge-coupled devices in Chapters M, N, 0 and P.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
A. Books and Review Articles (General).- I. Books.- II. Review Articles.- B. Crystal Growth and Wafer Preparation.- I. Bibliographies.- II. Books.- III. Review Articles.- IV. Automation.- V. Crystal Growth.- VI. Wafer Processing.- C. Epitaxy.- I. Books and Symposia.- II. Review Articles.- III. Equipment.- IV. Automation.- V. Growth Kinetics.- VI. Homoepitaxy.- VII. Autodoping.- VIII. Impurities.- IX. Heteroepitaxy.- X. Film Properties.- XI. Applications.- D. Dielectric Thin Films.- I. Bibliographies.- II. Books.- III. Review Articles.- IV. Film Preparation.- V. Physical Measurements.- VI. Film Properties.- VII. Double Dielectric.- VIII. Dielectric-Metal Interface.- IX. Passivation and PSG.- E. Lithography.- I. Books and Symposia.- II. Review Articles.- III. Equipment.- IV. Photoresist.- V. Electron Resist.- VI. Other Resists.- VII. Masks.- F. Ion Implantation.- I. Bibliographies.- II. Books and Symposia.- III. Review Articles.- IV. Theory.- V. Materials.- VI. Device Applications.- VII. Equipment.- G. Etching.- I. Bibliographies.- II. Books.- III. Review Articles.- IV. Equipment.- V. Techniques.- VI. Semiconductors.- VII. Dielectrics.- VIII. Metals.- H. Isolation Techniques.- I. Bibliographies.- II. Review Articles.- III. Junction Isolation.- IV. Dielectric Isolation.- V. Other Techniques.- I. Device Fabrication.- I. Field-Effect Transistors.- II. Charge-Coupled Devices.- III. Schottky Diodes.- IV. Ohmic Contacts.- J. Radiation Damage.- I. Books.- II. Symposia.- III. Review Articles.- IV. Materials.- V. Devices.- K. Defects.- I. Books.- II. Review Articles.- III. Line Defects.- IV. Plane Defects.- V. Point Defects.- VI. Mechanical Damage.- L. Structure Analysis.- I. Bibliographies.- II. Books.- III. Review Articles.- IV. Electron Beam Techniques.- V. Ion Techniques.- VI.X-Ray Techniques.- VII. Infrared Techniques.- VIII. Neutron Techniques.- IX. Laser Techniques.- X. Etching Techniques.- XI. Electron Paramagnetic Resonance.- XII. Synergism.- XIII. Others.- M. Electrical and Optical Properties of mis Devices.- I. Bibliographies.- II. Books.- III. Review Articles.- IV. Theory.- V. Electrical Properties.- VI. Characterization.- VII. Gettering.- VIII. MIS as a Research Tool.- IX. Optical Properties.- N. Fet Technologies and Applications.- I. Books.- II. Review Articles.- III. Technologies.- IV. Applications.- V. Reliability and Cost.- O. Charge-Coupled Devices.- I. Bibliographies.- II. Books and Symposia.- III. Review Articles.- IV. Clocking.- V. Applications.- VI. Other Charge Transfer Devices.- VII. Characterization.- P. Schottky Diodes.- I. Books.- II. Review Articles.- III. Theory.- IV. Physical and Electrical Properties.- V. Schottky Barrier Diode as a Research Tool.- VI. Practical Applications.- VII. Exploratory Devices.- Q. Modeling.- I. Bibliographies.- II. Books.- III. Review Articles.- IV. Computer Analysis.- V. Mathematical Analysis.- VI. P-N Junctions.- VII. Diodes.- VIII. Bipolar Transistors.- IX. Field-Effect Transistors.- X. Charge-Coupled Devices.- XI. Ohmic Contacts.- XII. Silicon Dioxide.- XIII. Thyristors.- XIV. Other Devices.- XV. Integrated Circuits.- XVI. Second Breakdown.- XVII. Miscellaneous.- R. Packaging.- I. Bibliographies.- II. Book.- III. Review Articles.- IV. Chip Bonding.- V. Beam-Lead Devices.- VI. Soldering Techniques.- VII. Bonding Techniques.- VIII. Metal-Insulator Seals.- IX. Interconnections.- X. Metallized Ceramics.- XI. Epoxies.- XII. Pastes/Screens.- XIII. Resistors.- XIV. Capacitors.- XV. Laser Techniques.- XVI. Encapsulation.- XVII. Hermeticity.- XVIII. Fabrication Techniques.- XIX. Types of Packages.- XX. Thermal Design.- XXI. Reliability and Failure Analysis.- XXII. Characterization.- XXIII. Computer-Aided Design.- XXIV. Tooling and Equipment.- XXV. Cost and Yield.
