Sonstiges, Englisch, Band Volume 711, 270 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
Sonstiges, Englisch, Band Volume 711, 270 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ISBN: 978-3-03795-148-4
Verlag: Trans Tech Publications
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Biomaterialien, Nanomaterialien, Kohlenstoff
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Progress in 3C-SiC Growth and Novel ApplicationsElimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC SubstrateCVD Growth of 3C-SiC on 4H-SiC SubstrateThe Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC LayersStructural Characterization of Heteroepitaxial 3C-SiCConsideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si SubstratesEpitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding LayerStudy of 3C-SiC Mechanical Resonators, Filters and MixersMechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS ApplicationStrain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical ModellingElaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor DepositionFabrication of SiC Nanopillars by Inductively Coupled SF6/O2 PlasmaMaterial Limitations for the Development of High Performance SiC NWFETsSelective ?-SiC/SiO2 Core-Shell NW Growth on Patterned Silicon SubstrateHigh Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive DetectionDetailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined CantileversHigh Quality 3C-SiC Substrate for MOSFET FabricationCharacterization of Band Diagrams of Different Metal-SiO2-SiC(3C) StructuresDesign of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETsThe Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS CapacitorsElectrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure BehaviourVisible and Deep Ultraviolet Study of SiC/SiO2 InterfaceHigh Temperature Capability of High Voltage 4H-SiC JBSParallel and Serial Association of SiC Light Triggered ThyristorsNano-Analytical and Electrical Characterization of 4H-SiC MOSFETsStructural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001)Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation EpitaxyDose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on SiOn Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and HeterostructuresLow Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device ApplicationsInvestigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiCEvaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different TemperaturesTi Thickness Influence for Ti/Ni Ohmic Contacts on N-Type 3C-SiCInvestigation of Al-Ti Ohmic Contact to N-Type 4H-SiCBarrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky DiodeMOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device ApplicationsMicrostructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices ApplicationsInvestigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaNSi+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on SiliconComprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD SimulationsGaN-on-Silicon Evaluation for High-Power MMIC ApplicationsComparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD ProcessAlmost Free Standing Graphene on SiC(000-1) and SiC(11-20)Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual SubstratesGraphene Nano-Biosensors for Detection of Cancer RiskGraphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)
