3-vols. Set.
Buch, Englisch, 1340 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 3200 g
ISBN: 978-0-87849-279-4
Verlag: Trans Tech Publications
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Preface
Chapter 1: SiC Bulk Growth
1.1 Bulk Growth of 4H-SiC
High Quality 100mm 4H-SiC Substrates with Low Resistivity
Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside
1.2 Bulk Growth of 6H-, 2H- and 3C-SiC
Status of 3" 6H SiC Bulk Crystal Growth
Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method
Purifying Mechanism in the Acheson Process - A Thermodynamic Study
Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process
Overview of 3C-SiC Crystalline Growth
Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity ß-SiC Powder by the Sol-Gel Method
Chapter 2: SiC Epitaxial Growth
2.1 Homoepitaxial Growth
Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
Growth and Properties of SiC On-Axis Homoepitaxial Layers
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors
Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC
Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
2.2 Heteroepitaxial and Heteropolytypic Growth
The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)
Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates
Tuning Residual Stress in 3C-SiC(100) on Si(100)
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
Chapter 3: Physical Properties and Characterization of SiC
3.1 Physical Properties
Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC
Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
Increase of SiC Substrate Resistance Induced by Annealing
Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films
Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si Ratio
3.2 Extended Defects and multicrystalline SiC
A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy
On the Luminescence and Driving Force of Stacking Faults in 4H-SiC
Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
Dislocation Activity in 4H-SiC in the Brittle Domain
Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects
6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC
Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
Macrodefects in Cubic Silicon Carbide Crystals
Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy
TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
TEM and SEM-CL Studies of SiC Nanowires
Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations
3.3 Point Defects: Intrinsic Defects and Impurities
Theory of Neutral Divacancy in SiC: A Defect for Spintronics
The Carbon Vacancy Related EI4 Defect in 4H-SiC
Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation
New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC
LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers
A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons
Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques
Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering
Breakdown of Impurity Al in SiC Polytypes
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films
3.4 Interfaces and Surfaces
Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
SiC and GaN MOS Interfaces – Similarities and Differences
Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO2/4H-SiC Interface on C-Face at 1500K: From First Principles
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC
A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures
EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
Electrical Properties and Gas Sensing Characteristics of the Al2O3/4H SiC Interface Studied by Impedance Spectroscopy
Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics
Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency
Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy
3.5 Wafer Mapping Techniques
Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera
Chapter 4: Graphene
4.1 Growth
Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
Growth Rate and Thickness Uniformity of Epitaxial Graphene
Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure
Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies
Differences between Graphene Grown on Si-Face and C-Face
Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation
4.2 Characterization and Modelling
Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles
Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping
Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates
Optical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral Range
Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface
4.3 Processing and Devices
Hydrogen Intercalation below Epitaxial Graphene on SiC(0001)
Quasi-Freestanding Graphene on SiC(0001)
Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)
Chapter 5: Processing of SiC
5.1 Processing of MOS and SBD Power Devices
Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs
Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics
Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC
Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
On the Viability of Au/3C-SiC Schottky Barrier Diodes
Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
The Limits of Post Oxidation Annealing in NO
5.2 Doping, Implantation and Annealing
Electrical Activation of B+-Ions Implanted into 4H-SiC
Manganese in 4H-SiC
Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
5.3 Ohmic Contacts and Bonding
TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
SiC-Die-Attachment for High Temperature Applications
Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
Development of a Wire-Bond Technology for SiC High Temperature Applications
5.4 Polishing and Etching of Surfaces
Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique
Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy
Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System
Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching
Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience
Impact of CF4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
4H-SiC Surface Morphology Etched Using ClF3 Gas
Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs
Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride
5.5 Oxides and other Dielectrics
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy
Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy
Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC
5.6 Micromachining
Nanostructuring Techniques for 3C-SiC(100) NEMS Structures
SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment
Temperature Facilitated ECR-Etching for Isotropic SiC Structuring
Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC
Thinning of SiC Wafer by Plasma Chemical Vaporization Machining
Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) Substrates
Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH4 and Ar-CF4 Mixtures
Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators
Chapter 6: SiC Devices
6.1 Schottky Barrier Diodes
Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers
A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses
Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
6.2 PiN Diodes
6.5 kV SiC PiN Diodes with Improved Forward Characteristics
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance
Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
Preliminary Investigation of Laser Induced Photoconductivity in 4H-SiC PiN Diodes and HPSI Substrate
Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation
4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
6.3 JFETs and MESFETs
Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations
Fast Switching with SiC VJFETs - Influence of the Device Topology
Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current
Radiation Hardness Evaluation of SiC-BGSIT
Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
Amplitude Shift Keyed Radio Communications for Hostile Environments
Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor
Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C
Circuit Modeling of Vertical Buried-Grid SiC JFETs
6.4 MOSFETs
Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
Wafer-Level Hall Measurement on SiC MOSFET
Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
1360 V, 5.0 mOcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics
Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer
Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
6.5 Bipolar Transistors and Thyristors
9 kV, 1 cm2 SiC Gate Turn-Off Thyristors
Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs
10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter
2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability
Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices
A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed
Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
3kV 4H-SiC Thyristors for Pulsed Power Applications
Operation of Silicon Carbide BJTs Free from Bipolar Degradation
Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
6.6 Sensors and Detectors
Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers
Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors
Impact Ionization in 4H-SiC Nuclear Radiation Detectors
Characterisation of Low Noise 4H-SiC Avalanche Photodiodes
Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage
Silicon Carbide APD with Improved Detection Sensitivity and Stability
Silicon Carbide Based Energy Harvesting Module for Hostile Environments
6.7 Circuits, System Applications
New Generation of SiC Based Biodevices Implemented on 4” Wafers
SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors
Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing
Application of SiC Normally-On JFETs in Photovoltaic Power Converters: Suitable Circuits and Potentials
Fabrication of SiC JFET-Based Monolithic Integrated Circuits
Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
Performance and Reliability of SiC MOSFETs for High-Current Power Modules
Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
SiC JFETs for Power Module Applications
System Improvements of Photovoltaic Inverters with SiC-Transistors
Discussion of Turn on Current Peaks of SiC Switches in Half Bridges
Chapter 7: III-Nitrides, II-VI Compounds and Diamond
7.1 Growth of III-Nitrides
AlN Substrates and Epitaxy Results
Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates
7.2 Characterization of III-Nitrides
Deep-Level Defects in AlN Single Crystals: EPR Studies
Quality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron Sputtering
Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC
7.3 III-Nitride Devices
2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices
2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates
Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs
7.4 Other Related Materials
Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
High Temperature Characteristics of Diamond SBDs
Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires
Nitrogen Centers in Nanodiamonds: EPR Studies
Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices
