Buch, Englisch, 340 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 540 g
Buch, Englisch, 340 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 540 g
Reihe: Integrated Circuits and Systems
ISBN: 978-1-4419-4409-2
Verlag: Springer US
provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.
The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.
is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Technik Allgemein Physik, Chemie für Ingenieure
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
The SOI MOSFET: from Single Gate to Multigate.- Multigate MOSFET Technology.- BSIM-CMG: A Compact Model for Multi-Gate Transistors.- Physics of the Multigate MOS System.- Mobility in Multigate MOSFETs.- Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs.- Multi-Gate MOSFET Circuit Design.
