Buch, Englisch, 772 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 1315 g
1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK
Buch, Englisch, 772 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 1315 g
Reihe: Institute of Physics Conference Series
ISBN: 978-0-7503-0650-8
Verlag: CRC Press
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.
This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
Zielgruppe
Professional
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Thermodynamik Physik der Zustandsübergänge
- Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
- Naturwissenschaften Physik Elektromagnetismus Magnetismus
- Naturwissenschaften Chemie Anorganische Chemie Festkörperchemie
- Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
- Naturwissenschaften Physik Elektromagnetismus Mikroskopie, Spektroskopie
Weitere Infos & Material
High resolution microscopy and microanalysis (10 papers). Dislocations and boundaries (9 papers). Self-organized and quantum domain structures (14 papers). Epitaxy-growth phenomena (22 papers). Epitaxy-defect formation (16 papers). Epitaxy-wide band-gap nitrides (20 papers). Processed silicon and related materials (24 papers). Metallization, silicides and contacts (9 papers). Device studies and specimen preparation (7 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (20 papers).
