Defects in Semiconductors

Erscheinungsjahr 2015
ISBN: 978-0-12-801935-1
Verlag: William Andrew Publishing

Buch, Englisch, 458 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 820 g

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.

The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.

Zielgruppe

<p>students, researchers from both academics and industrial companies dealing with semiconductor or semiconductor applications</p>

Autoren/Hrsg.

Weitere Mitwirkende

Jagadish, Chennupati

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

- Role of Defects in the Dopant Diffusion in Si

Peter Pichler

- Electron and Proton Irradiation of Silicon

Arne Nylandsted Larsen and Abdelmadjid Mesli

- Ion Implantation Defects and Shallow Junctions in SI and GE

Enrico Napolitani and Giuliana Impellizzeri

- Defective Solid-phase Epitaxial Growth of Si

Nicholas G. Rudawski, Aaron G. Lind and Thomas P. Martin

- Nanoindentation of Silicon and Germanium

Mangalampalli S. R. N. Kiran, Bianca Haberl, Jodie E. Bradby and James S. Williams

- Analytical Techniques for Electrically Active Defect Detection

Eddy Simoen, Johan Lauwaert and Henk Vrielinck

- Surface and Defect States in Semiconductors Investigated by Surface Photovoltage

Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini

- Point Defects in ZnO

Matthew D. McCluskey

- Point Defects in GaN

Michael A. Reshchikov

- Point Defects in Silicon CarbideNaoya Iwamoto and Bengt G. Svensson

Über Autor(innen)

Jagadish, Chennupati
Chennupati Jagadish is an Australian Laureate Fellow and Distinguished Professor at Research School of Physics and Engineering at the Australian National University, Canberra. He published more than 800 papers (530 journal papers) and edited many books, chaired many conferences and served many professional societies e.g. President of IEEE Nanotechnology Council; Vice-President, IEEE Photonics Society, Vice-President and Secretary Physical Sciences, Australian Academy of Science. He won many awards, e.g. Peter Baume Award, Boas Medal, IEEE Third Millennium Medal, Distinguished Lecturer Awards from IEEE Photonics Society, IEEE Electron Devices Society and IEEE Nanotechnology Council, Electronics and Photonics Division Award from Electrochemical Society, Distinguished Service Awards from IEEE Nanotechnology Council and IEEE Photonics Society. His research interests are in compound semiconductor optoelectronics and nanotechnology. He has trained more than 45 PhD students and about 50 post-doctoral and research fellows. He holds honorary appointments at UESTC, Chengdu, Tokyo University, Nanjing University and Anna University. He has collaborated and co-authored papers with scientists from 25 countries. He serves as an Editor of 3 book series and 7 journals and a member of editorial boards of 17 journals.