CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications

Erscheinungsjahr 2016
ISBN: 978-1-60511-128-5
Verlag: Cambridge University Press

Buch, Englisch, 179 Seiten, Format (B × H): 157 mm x 235 mm, Gewicht: 440 g

Reihe: MRS Proceedings

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

Autoren/Hrsg.

Demkov, Alexander A.

Taylor, Bill

Harris, H. Rusty

Butterbaugh, Jeffery W.

Rachmady, Willy

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde