Sonstiges, Englisch, Band Volumes 717-720, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
Sonstiges, Englisch, Band Volumes 717-720, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Materials Science Forum
ISBN: 978-3-03795-239-9
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
Weitere Infos & Material
Status of Large Diameter SiC Single CrystalsTSD Reduction by RAF (Repeated a-Face) Growth MethodGrowth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed CrystalsProcess and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger DiameterFundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single CrystalsAnalysis of Growth Velocity of Si? Growth by the Physical Vapor Transport MethodEffect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT MethodLateral Growth Expansion of 4H/6H-Si? M-Plane Pseudo Fiber Crystals by Hot Wall CVD EpitaxySynthesis and Purification of Silicon Carbide Powders for Crystal GrowthBulk and Surface Effects on the Polytype Stability in SiC CrystalsCrystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C SolutionSiC Growth by Solvent-Laser Heated Floating ZoneStable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution GrowthControl of Void Formation in 4H-SiC Solution GrowthTop-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based MeltGrowth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH4 FlowGrowth Rate Prediction in SiC Solution Growth Using Silicon as SolventSiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary ReactorGrowth of 4H-SiC Epilayers and Z1/2 Center EliminationGrowth and Light Properties of Fluorescent SiC for White LEDsHigh Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4? Off-Axis 4H-SiCEpitaxial Growth of 4H-Si? Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method4H-SiC Epitaxial Growth on 2? Off-Axis Substrates using Trichlorosilane (TCS)Development of Vertical 3?2?LPCVD System for Fast Epitaxial Growth on 4H-SiCCarrot Defect Control in Chloride-Based CVD through Optimized Ramp up ConditionsChloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-AnglesComparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane GasesIn-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as PrecursorsInvestigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching MethodElectrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth MethodUse of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device ApplicationsProgress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC SubstratesImprovement of Homoepitaxial Layer Quality Grown on 4H-Si? Si-Face Substrate Lower than 1 Degree Off AngleSurface Morphology Evolution after Epitaxial Growth on 4?Off-Axis 4H-SiC SubstrateStudy of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide FilmsBehavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial GrowthInfluence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiCThe Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial LayersStudy of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned Si? SubstrateBuried Selective Growth of p-Doped SiC by VLS EpitaxyReliable Method for Eliminating Stacking Fault on 3C-SiC(001)Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on SiliconEffect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVDLow Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si SubstratesCVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) SubstratesOn Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC SubstratesSixCy Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical PropertiesTransition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio CalculationsElectronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiCIdentification of Niobium in 4H-SiC by EPR and Ab Initio StudiesMn Implantation for New Applications of 4H-SiCDiffusion and Gettering of Transition Metals in 4H-SiCChlorine in SiC: Experiment and TheoryPhotoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon CarbideSimulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiCElimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical ModelOn the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing StepsZ1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?Excitation Properties of Silicon Vacancy in Silicon CarbideInvestigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence SpectroscopyLocal Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiCDefects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection EfficiencyEffects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient SpectroscopyInvestigation of Additional States in the Silicon Carbide Surface after Diffusion WeldingLong Carrier Lifetimes in n-Type 4H-SiC EpilayersComparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC EpilayersRadial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer RotationHigh-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC EpilayersCorrelation of Extended Defects on Carrier Lifetime in Thick SiC EpilayersCharacterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor SwitchesCorrelation between Strain and Excess Carrier Lifetime in a 3C-SiC WaferCarrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical ProbesCritical Conditions of Misfit Dislocation Formation in 4H-SiC EpilayersFourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown CrystalsX-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiCBasal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiCIdentification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence MicroscopyEffects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC EpilayersAnalysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiCSynchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiCDeflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT?Grown Substrates with Associated Stacking FaultsConversion Mechanism of Threading Screw Dislocation during SiC Solution GrowthComplex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single CrystalsCorrelation between Surface Morphological Defects and Crystallographic Defects in SiCCharacterization of Triangular-Defects in 4? off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron MicroscopyVariation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC WaferCritical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier DiodeSurface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force MicroscopeDensity and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 GasDislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC SubstrateEffect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN DiodesUltraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial LayersPhotoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiCRoom Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault DensityLuminescence Imaging of Extended Defects in SiC via Hyperspectral ImagingLow Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis SubstratesInteraction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals
Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and DopingOn the Twin Boundary Propagation in (111) 3C-SiC LayersDefect Structures at the Silicon/3C-SiC InterfaceElectrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 InterfacesDefinitive Identification of an Important 4H SiC MOSFET Interface/Near Interface TrapComparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETsSub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS CapacitorsOxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO2 StructuresSilicon Carbide-Silicon Dioxide Transition Layer MobilitySodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETsTotal Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen PassivationDetection of Mobile Ions in the Presence of Charge Trapping in SiC MOS DevicesTwo-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETsPeak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS CapacitorsLow Frequency Noise in 4H-SiC Lateral JFET StructuresInfluence of Threading Dislocations on Lifetime of Gate Thermal OxideDoping-Induced Lattice Mismatch and Misorientation in 4H-SiC CrystalsStrain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiCHigh Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC CrystalsOn the Stability of 3C-SiC Single Crystals at High TemperaturesXRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser AnnealOrigin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic StressRaman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si4H-SiC Wafers Studied by X-Ray Absorption and Raman ScatteringMechanical Properties of Cubic SiC, GaN and AlN Thin FilmsExtended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device ApplicationsStress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si SubstratesMicro-Raman Analysis of a Micromachined 3C-SiC CantileverSingle-Crystal SiC Resonators by Photoelectrochemical EtchingAmorphous Silicon Carbide (a-SiC) Thin Square Membranes for Resonant Micromechanical DevicesAmorphous Silicon Carbide as a Non-Biofouling Structural Material for Biomedical MicrodevicesSeebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVDOBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization CoefficientsRadiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation DetectorsTerahertz Electroluminescence of 6H-SiC Natural SiC Superlattice in Bloch Oscillations RegimeEmission Enhancement of SiC/SiO2 Core/Shell Nanowires Induced by the Oxide ShellTheoretical Study of Thermoelectric Properties of SiC NanowiresGaAs Nanowires: A New Place to Explore Polytype PhysicsThe Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC SurfaceSurface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC CrucibleMorphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal EtchingFirst-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step EdgeCharacterization of Photoelectrochemical Properties of SiC as a Water Splitting MaterialRoom Temperature Physical Characterization of Implanted 4H- and 6H-SiCElectronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) SurfaceSpatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene GrowthControl of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen IntercalationGraphene on Carbon-Face Si?{0001} Surfaces Formed in a Disilane EnvironmentThe Registry of Graphene Layers Grown on SiC(000-1).Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)CVD Growth of Graphene on 2?? 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer HomogeneityStructural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon CarbideStudy of Epitaxial Graphene on Non-Polar 6H-SiC FacesMicro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)Electrical Characterization of the Graphene-SiC HeterojunctionEpitaxial Single-Layer Graphene on the SiC SubstrateDecoupling the Graphene Buffer Layer from SiC(0001) via Interface OxidationStudies of Li Intercalation into Epitaxial Graphene on SiC(0001)Plasma-Based Chemical Modification of Epitaxial GrapheneEvidence of Electrochemical Graphene Functionalization by Raman SpectroscopyMolecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection SpectroscopyHigh Performance RF FETs Using High-k Dielectrics on Wafer-Scale Quasi-Free-Standing Epitaxial GrapheneGated Epitaxial Graphene DevicesSuppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain RegionsT- and Y-Branched Three-Terminal Junction Graphene DevicesDevelopment of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas DetectionTemperature Dependent Chemical Sensitivity of Epitaxial GrapheneSynchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face SubstratesChallenges of High-Performance and High-Reliablity in SiC MOS StructuresEffect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS DevicesTemperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETsEffects of N Incorporation on Electron Traps at SiO2/SiC InterfacesImpact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC InterfaceEffect of Direct Nitridation of 4H-SiC Surface on MOS Interface StatesImproved Deposited Oxide Interfaces from N2 Conditioning of Bare SiC SurfacesDevelopment of 4H-SiC MOSFETs with Phosphorus-Doped Gate OxideEffect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiCThe Effects of Phosphorus at the SiO2/4H-SiC InterfaceSiO2/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal TreatmentsImprovement in the SiO2/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen PeroxideElectron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced OxidationPassivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium IonsImpact of UV Irradiation on Thermally Grown 4H-SiC MOS DevicesStudy of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS CapacitorsComparison of Oxide Quality for Monolithically Fabricated SiC CMOS StructuresA Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-WellTwo-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-FaceFrequency-Dependent Charge Pumping on 4H-SiC MOSFETsImplementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide ParametersIdentification of Slow States at the SiO2/SiC Interface through Sub-Bandgap IlluminationEffect of Nuclear Scattering Damage at SiO2/SiC and Al2O3/SiC Interfaces ? a Radiation Hardness Study of DielectricsHigh Temperature Reliability of High-k/SiC MIS Hydrogen SensorsShallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion ProcessHigh Dose Al+ Implanted and Microwave Annealed 4H-SiCHigh Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power DevicesEffects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiCThe Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiCThe Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiCElectroless Nickel for N-Type Contact on 4H-SiCDevelopment of an Extreme High Temperature n-Type Ohmic Contact to Silicon CarbideInvestigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiCGaZnO as a Transparent Electrode to Silicon CarbideCommon Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature RangeMetal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-ParticlesCutting Speed of Electric Discharge Machining for SiC IngotCutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire ElectrodeCurious Relationship between Orientation of SiC Substrates and Chemical ReactivityHigh-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred EtchingNovel Cleaning Method of SiC Wafer with Transition Metal ComplexClearance of 4H-SiC Sub-Trench in Hot Chlorine TreatmentSIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical MeasurementsFocused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale PatterningHexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma MethodEpitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-SiECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa StructuresLocal Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force MicroscopyImpact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC DiodesExperimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High TemperaturePerformance of a 650V SiC Diode with Reduced Chip ThicknessA Fully Electrically Isolated Package for High Temperature SiC SensorsCurrent Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation4H-SiC Trench Structure Schottky DiodesInfluence of Anode Layout on the Performance of SiC JBS DiodesPerformance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBTHybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier LifetimesDesign, Yield and Process Capability Study of 8 kV 4H-SiC PIN DiodesCharacterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 ?C11.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN DiodeTransient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode600 V PIN Diodes Fabricated Using On-Axis 4H Silicon CarbideExperimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN DiodesSingle Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC DevicesPositive Temperature Coefficient SiC PiN DiodesFully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC WafersElectrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal OxidationPhysical Modelling of 4H-SiC PiN DiodesThermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic DevicesEffect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor SwitchesNovel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height ControlFabrication of 4H-SiC/Nanocrystalline Diamond PN JunctionsRecovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect TransistorsDemonstration of SiC Vertical Trench JFET ReliabilityReliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching StressingAvalanche Breakdown Energy in Silicon Carbide Junction Field Effect TransistorsCharacterization of SiC JFET in Novel Packaging for 1 MHz OperationPackaging Technologies for 500?C SiC Electronics and SensorsHigh Voltage SiC Vertical JFET for High Power RF ApplicationsDesign of an Integrated SiC JFET Power Switch and Flyback DiodeA Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOAFabrication Issues of 4H-SiC Static Induction TransistorsHigh Performance SiC IEMOSFET/SBD ModuleDevelopment of 1200 V, 3.7 mO-cm2 4H-SiC DMOSFETs for Advanced Power ApplicationsHigh-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs690V, 1.00 mOcm2 4H-SiC Double-Trench MOSFETsSiC MOSFET Reliability UpdateMaterial Defects and Rugged Electrical Power Switching in SemiconductorsComparative Study of SiC MOSFETs in High Voltage Switching OperationCharge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment ApplicationsIntegration of Temperature and Current Sensors in 4H-SiC VDMOSSiC-MOSFET Structure Enabling Fast Turn-On and -Off SwitchingCalibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs4H-SiC MOSFETs with Si-Like Low-Frequency Noise CharacteristicsHigh Temperature Performance of 3C-SiC MOSFETs with High Channel MobilityDependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel LengthEnhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction ProcessLarge Area 1200 V SiC BJTs with ?>100 and ?ON<3 mOcm21200 V-Class 4H-SiC ?Super? Junction Transistors with Current Gains of 88 and Ultra-Fast Switching CapabilityInvestigation of Current Gain Degradation in 4H-SiC Power BJTsDevelopment of 15 kV 4H-SiC IGBTsUltra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiCAn Investigation of Material Limit Characteristics of SiC IGBTsImproved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel TerminationHigh dI/dt Pulse Switching of 1.0 cm2 SiC GTOsIntegrated SiC Anode Switched Thyristor Modules for Smart-Grid ApplicationsFabrication and Characterization of 4H-SiC 6kV Gate Turn-Off ThyristorComparison of SiC Thyristors with Differently Etched JTEsHigh-Yield 4H-SiC Thyristors for Wafer-Scale InterconnectionBipolar Degradation in 4H-SiC ThyristorsPulse Characterization of Optically Triggered SiC ThyristorsEvaluation of High Power Experimental SiC SGTO Devices for Pulsed Power ApplicationsCharacterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 ?CDevelopment of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for PackagingLaser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor OpticsSilicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments4H-SiC P+N UV Photodiodes: A Comparison between Beam and Plasma Doping ProcessesA Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV PhotodetectorsCharacterization of Poly-SiC Pressure Sensors for High Temperature and High Pressure ApplicationsHigh Temperature Capacitive Pressure Sensor Employing a SiC Based Ring OscillatorHigh Temperature Silicon Carbide Power Modules for High Performance Systems10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion TechnologiesSiC JFET Power Modules for Reliable 250?C OperationA Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc InverterPerformance of a 25kW 700V Galvanically Isolated Bidirectional DC-DC Converter Using 1.2kV Silicon Carbide MOSFETs and Schottky DiodesSwitching Losses in a SiC-Based DC-DC Multilevel Boost ConverterHigh Voltage SiC Schottky Diodes in Rectifiers for X-Ray GeneratorsSiC Solid-State Disconnect for High Power System ApplicationsA 450?C High Voltage Gain AC Coupled Differential AmplifierBipolar Integrated OR-NOR Gate in 4H-SiC300C Capable Digital Integrated Circuits in SiC TechnologyReliability of Silicon Carbide Integrated Circuits at 300?CDirect Frequency Modulation of a High Temperature Silicon Carbide OscillatorConversion of Si Nanowires into SiC NanotubesGrowth of SiC Nanowires on Different Planes of 4H-SiC SubstratesFabrication of Silicon Carbide Thin Film as a Stabilizing Layer for Improving the Stability of Porous Silicon PhotodiodesLow Defect Density Bulk AlN Substrates for High Performance Electronics and OptoelectronicsControl of the Growth Habit in the Na Flux Growth of GaN Single CrystalsEvolution of Structural and Electrical Properties of Au/Ni Contacts onto P-GaN after AnnealingLarge GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown VoltagePerformance Comparison of GaN Power Transistors and Investigation on the Device Design IssuesDesign of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTsDensity Functional Simulations of Transition Metal Terminated (001)-Diamond SurfacesElectrical Characterisation of Defects in Polycrystalline B-Doped Diamond FilmsDiamond Vertical Schottky Barrier Diode with Al2O3 Field PlateFabrication and Characterization of n-ZnO/p-SiC Heterojunction DiodeEffects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiCCdGeN2 and ZnGe0.5Sn0.5N2: Two New Nitride Semiconductors with Band Gaps in the Blue-Green
