Metal Oxides for Non-volatile Memory

Materials, Technology and Applications
Erscheinungsjahr 2022
ISBN: 978-0-12-814629-3
Verlag: William Andrew Publishing

Buch, Englisch, 536 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 860 g

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory.

Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems.

Zielgruppe

Materials Scientists (Researchers and Engineers), Physicists, and Chemists in academia and industry r&d

Autoren/Hrsg.

Dimitrakis, Panagiotis

Valov, Ilia

Tappertzhofen, Stefan

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

1. Introduction to non-volatile memory 2. Resistive switching in metal-oxide memristive materials and devices 3. Charge trapping NVMs with metal oxides in the memory stack 4. Technology and neuromorphic functionality of magnetron-sputtered memristive devices 5. Metalorganic chemical vapor deposition of aluminum oxides: A paradigm on the process-structure-properties relationship 6. MOx materials by ALD method 7. Nano-composite MOx materials for NVMs 8. MOx in ferroelectric memories 9. "Metal oxides in magnetic memories�: Current status and future perspectives 10. Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications 11. The effect of external stimuli on the performance of memristive oxides 12. MOX for NVM on graphene and 2D materials 13. Ubiquitous memristors on-chip in multi-level memory, in-memory computing, data converters, clock generation and signal transmission 14. Neuromorphic applications using MOx-based memristors

Über Autor(innen)

Valov, Ilia
Ilia Valov is a Senior Scientist at the Peter Gruenberg Institute, Electronic Materials (IEM), Julich, Germany.

Dimitrakis, Panagiotis
Panagiotis Dimitrakis is a Senior Researcher, Cleanroom Facility Manager in the Institute of Nanoscience and Nanotechnology, Greece.

Tappertzhofen, Stefan
Prof. Dr. Stefan Tappertzhofen studied electrical engineering and information technology at RWTH Aachen University and received his PhD in 2014. From 2014 - 2016 he worked as research associate at the Department of Engineering, University of Cambridge. Afterwards, he worked as a research and development manager for semiconductor measurement technology at aixACCT Systems. Since 2020 he is Professor in Micro- and Nanoelectronics at TU Dortmund University. His research is focused on novel multi-functional materials, memristive systems and circuits, and quantum- and nanotechnology.