Buch, Englisch, 524 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 980 g
Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997
Buch, Englisch, 524 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 980 g
Reihe: Institute of Physics Conference Series
ISBN: 978-0-7503-0500-6
Verlag: CRC Press
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Zielgruppe
Professional
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Naturwissenschaften Chemie Anorganische Chemie Festkörperchemie
- Naturwissenschaften Physik Thermodynamik Physik der Zustandsübergänge
- Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
- Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
Weitere Infos & Material
Preface. Glossary. Nanoscanning (9 papers). Electron beam methods (9 papers). Optical methods (8 papers). Mapping (10 papers). X-ray methods (4 papers). Other and combined methods (8 papers). Image processing. Standardization. Si and SiGe mixed crystals (15 papers). SiC (3 papers). GaN (6 papers). Other III-V compounds (12 papers). II-VI compounds, phosphors, oxides and alternative substrates (4 papers). Processing and defects (3 papers). Defect recognition in devices and degradation (11 papers). Author and subject indices.
