Defect Recognition and Image Processing in Semiconductors 1997

Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997
1. Auflage 1998
ISBN: 978-0-7503-0500-6
Verlag: CRC Press

Buch, Englisch, 524 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 980 g

Reihe: Institute of Physics Conference Series

Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Zielgruppe

Professional

Autoren/Hrsg.

Doneker, J.

Rechenberg, I.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Chemie Anorganische Chemie Festkörperchemie
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
• Naturwissenschaften Physik Thermodynamik Physik der Zustandsübergänge

Inhaltsverzeichnis

Preface. Glossary. Nanoscanning (9 papers). Electron beam methods (9 papers). Optical methods (8 papers). Mapping (10 papers). X-ray methods (4 papers). Other and combined methods (8 papers). Image processing. Standardization. Si and SiGe mixed crystals (15 papers). SiC (3 papers). GaN (6 papers). Other III-V compounds (12 papers). II-VI compounds, phosphors, oxides and alternative substrates (4 papers). Processing and defects (3 papers). Defect recognition in devices and degradation (11 papers). Author and subject indices.

Über Autor(innen)

Doneker, J.