The Mos System

Erscheinungsjahr 2014
ISBN: 978-1-107-00593-8
Verlag: Cambridge University Press

Buch, Englisch, 364 Seiten, Format (B × H): 173 mm x 246 mm, Gewicht: 862 g

This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.

Autoren/Hrsg.

Engström, Olof

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren

Inhaltsverzeichnis

1. Introduction; 2. Basic properties of the MOS system; 3. Basic properties of the gate stack; 4. Electron states at MOS interfaces; 5. Carrier capture at bulk oxide traps; 6. Electrical characterization by Fermi-probe technique; 7. Electrical characterization by thermal action; 8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy; 9. Electron spin resonance; 10. MOS systems with silicon dioxide dielectrics; 11. MOS systems with high-k dielectrics; 12. Gate metals and effective work function; 13. Transmission probabilities and current leakage in gate oxides; 14. MOS systems on high-mobility channel materials.

Über Autor(innen)

Engström, Olof
Olof Engström is Professor Emeritus of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden, having formerly held positions in industrial high-power MOS devices and sensors. His research focuses on semiconductor quantum structures and interfaces. He is a member of the Royal Swedish Academy of Engineering Sciences.