Gettering and Defect Engineering in Semiconductor Technology

Erscheinungsjahr 1993
ISBN: 978-3-03859-966-1
Verlag: Trans Tech Publications

Sonstiges, Englisch, Band Volumes 32-33, 650 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Solid State Phenomena

Solid State Phenomena Vols. 32-33

Autoren/Hrsg.

Grimmeiss, Hermann G.

Kittler, Martin

Richter, Hans

Inhaltsverzeichnis

ULSI Technology - a Complex Device Manufacturing ProcessSemiconductor Isotope EngineeringCrystalline Silicon for Solar CellsLight-Emitting Porous Silicon: A Defective Quantum Sponge Structure?Semiconducting Silicide-Silicon HeterostructuresWhat Local-Density Calculations Can Teach about Semiconductor Surfaces, Interfaces and DefectsMechanisms of Transition Metal Gettering in SiliconGettering in Silicon under Vacancy Generation ConditionsPhosphorus External Gettering Efficiency in Multicrystalline Silicon WafersDefect Engineering in Erbium-Doped Silicon Structure TechnologyPN Junction Formation by Two Steps Annealing Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy ConditionsProcesses of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length ProfileOn the Interaction of Transition Metals with Silicon Grain BoundariesDry Cleaning of Silicon Wafers in a Low Energy Hydrogen PlasmaReduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE Misfit Strain Engineering in Heteroepitaxial StructuresSurfactant-Mediated MBE of Strained-Layer III-V Semiconductor HeterostructuresTransition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)Properties of Hydrogen, Oxygen and Carbon in SiSolubility of Hydrogen in Silicon at High TemperaturesEffect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350? C and 500? CEvolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High TemperaturePeculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen ContentNew Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline SiliconOxygen and Copper Precipitation at the Silicon/Silicon Dioxide InterfaceThe Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVDAnnealing Properties of N-Doped Cz-Si CrystalsOxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study Formation and Properties of Tetranuclear Clusters of Manganese in SiliconEPR Identification of the Different Charge States of the Iron-Acceptor Pairs in SiliconInvestigation of Deep Levels and Carrier Dynamics in SiC FilmsProcess-Induced Defects in Silicon TechnologyLattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical CharacteristicsNon-Equilibrium Impurity Diffusion in Silicon and Silicon CarbideDopant Migration Caused by Point Defect GradientsVacancy Assisted Diffusion of Si in GaAs: Microscopic TheoryInvestigation of Defect Generation and Precipitation in Antimony Implanted SiliconElectric-Dipole Spin Resonance on Extended Defects in SiliconLuminescence of Dislocations in SiGe/Si StructuresOn the Nature of Dislocation Luminescence in Si and GeDefect Electrical Activity Study Using a Si(Ge) Heteroepitaxial StructureProperties of Dislocations and Point Defects in Fz-SiMetastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) HeterostructuresExperimental Study of Anomalous Dislocation Kinks Drift in Germanium Single CrystalsCu Precipitation in Strained and Relaxing GexSi1-x Heteroepitaxial LayersPeculiarities of Defect Formation in SiGe/Si and SiGe/Ge HeterostructuresThe Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD DeviceMetals, Oxide Precipitates and Minority Carrier Lifetime in SiliconUHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-MorphologyFormation of High Quality SiGe/Si HeterostructuresLiquid Phase Epitaxy of SiGe StructuresPlanar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III RatioSolvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si LayersDeposition and P Doping of Si(1-x)Gex Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock SystemMisfit Dislocations in Strained Layer EpitaxyStress Relaxation Mechanisms by Dislocations in the System Ge on SiStrain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor SystemsRelaxation Phenomena in Strained Si1-xGex Layers on Planar and Differently Patterned Si SubstratesEquilibrium Configuration of Misfit Dislocations in Graded BuffersEvolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned SiliconInvestigations of 2D Hole Gas in Strained Ge-Ge1-xSix SuperlatticesPhotoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well StructuresStrained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5?m)Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped HeterostructuresPhotoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic PigmentsApplication of Electron Microscopy to Semiconductor Materials ResearchX-Ray Analysis of Strained Layer ConfigurationsIn Situ X-Ray Investigation of Relaxation Processes in Si1-xGex Layers on Silicon SubstrateDetermination of Superlattice Structural Parameters in Mismatched Epitaxial StructuresInvestigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron DiffractionNew Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial StructuresDetection of Threading Dislocations by EBIC in a SiGe Epilayer with Graded BufferHREM and DLTS of S37(610) and S29(520 )[001] Tilt Grain Boundaries in Ge BicrystalsTEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi SystemMicro-Raman Investigations of Elastic and Plastic Strain Relief in Si1-xGex-HeterostructuresRaman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs SuperlatticesPositron Annihilation on Thermal Defects in Cz-Si and Fz-SiCharacterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-DiodesInvestigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC MeasurementsInvestigation of Recombination Properties of Ti Double Donor in SiMapping Interfacial Roughness and Composition in Elemental Semiconductor SystemsThe Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations