Nitride Wide Bandgap Semiconductor Material and Electronic Devices

1. Auflage 2016
ISBN: 978-1-4987-4512-3
Verlag: CRC Press

Buch, Englisch, 392 Seiten, Format (B × H): 183 mm x 260 mm, Gewicht: 934 g

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Zielgruppe

This book is intended for researchers working on semiconductor materials and devices. It also would be useful to engineers developing semiconductor, LED, laser, or power electronic devices. Additionally, it would be helpful to graduate students researching semiconductors and microelectronics.

Autoren/Hrsg.

Hao, Yue

Zhang, Jin Feng

Zhang, Jin Cheng

Fachgebiete

• Mathematik | Informatik EDV | Informatik EDV & Informatik Allgemein
• Naturwissenschaften Physik Physik Allgemein
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Über Autor(innen)

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.