Sonstiges, Englisch, 316 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 316 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-999-9
Verlag: Trans Tech Publications
Autoren/Hrsg.
Weitere Infos & Material
The Rinsing Problem: Effect of Solute-Surface Interactions on Wafer PurityHydrogenated Ultrapure Water Production System for Future Wet Cleaning ProcessBehaviour of Metallic Contaminants during Mos ProcessingHydrogen Peroxide Decomposition in Ammonia SolutionsNew Aspects of the Diluted Dynamic Clean ProcessSingle Step Alkaline Cleaning Solution for Advanced Semiconductor CleaningParticle Removal Efficiency and Silicon Roughness in HF-DIW/O3/Megasonics CleaningIndustrial Trends in Wet Processing TechnologyParticle Addition Behaviour of Oxide Stripping by HF SolutionsThe Electrochemical Kinetics of Silicon Surface Corrosion in HF Containing Dilute SolutionsInfluence of the Dissolved Gas in Cleaning Solution on Silicon Wafer Cleaning EfficiencyOptimization of Deionized Water Consumption in Wafer Wet ProcessingChemistry of the Silicon Oxide Surface: Adsorption from SC1 SolutionsProduction of High Concentrations of Bubble-Free Dissolved Ozone in WaterSi-Purifier: A Point of Use Purifier for Noble Metals in HF BathsPotassium Adhesion to Various CVD Oxide and the Surface Cleaning with Hot UPWProduction Performance of Single Tank Cleaning Processes for 0,25 ?m TechnologyOzonated DI-Water for Clean Chemical Oxide GrowthUltra-Thin Oxide Growth on Silicon Using Ozonated SolutionsGas-Phase Surface Processing Prior to 3.2 nm Gate OxidationPost Dry-Etch Cleaning Issues of an Organic Low-K DielectricVapor Phase Decomposition - Droplet Collection: Can we Improve the Collection Efficiency for Copper Contamination?Characterization of the Post Dry Etch Cleaning of the Silicon Surface Prior to Silicon Epitaxial GrowthSilicon Contamination Prevention in HF MixturesApplications of Tetramethylammoninium Hydroxide (TMAH) as a Post Tungsten CMP Cleaning MixtureFe and Cu Removal Efficiency in HF-DIW/O3 Cleaning SequencePost Polysilicon Etch (Incorporating DUV Resist an BARC) Polymer CleaningDetermination of Moisture / Water in Semiconductor Processing Liquids On-Line with the SemiChem Process AnalyzerEvaluation of Cleaning Recipes Based on Ozonated Water for Pre-Gate Oxide CleaningCharacterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition ReactorNitride Strip: Phosphoric Acid Bath-Life above 100 HoursWet Metal Etching for Ti/Co Self-Aligned SilicidesPost-Titanium-Salicide Cleaning with Spray TechnologyXPS Study of the Cleaning Efficiency by Ozone Processes of the Protective Films Formed by Reactive Ion Etching of Co and Ti SilicidePlasma Etch Residue and Photoresist Removal Utilizing Environmentally Benign Process ChemicalsAngle Resolved XPS Characterization of the Formation of Cl and Br Bonds in Poly-Silicon Etching and Its CleaningDynamics of Mass Transfer on a Wafer Surface in Ozonated-Water Processing for Photoresist RemovalConstruction of the Distribution System for Ozonized Water Used in the Wet Cleaning of Si Wafer SurfaceA Novel Resist and Post-Etch Residue Removal Process Using Ozonated ChemistryPost CMP Cleaning Using a Novel HF Compatible High Power Magasonic TankRelation between Oxide-CMP Induced Defects and Post-CMP Cleaning StrategiesEvaluation of Post Metal Etch Cleaning by Analyzing the Chemical Compositions and Distributions on the Etched Al SurfaceNew Methods for Contamination Control and Dry Cleaning of Silicon WafersWafer Backside Cleaning by Twin-Fluid Flow CleaningEvaluation of a Dry Laser Cleaning Process for the Removal of Surface ParticlesDependency of Micro Particle Adhesion of Dispersive and Nondispersive Interactions Analyzed by Atomic Force MicroscopyIntegrated Cleaning: Application of Densified Fluid Cleaning (DFC) to Post-Etch Residue RemovalApplication of Microcalorimeter EDS X-Ray Detectors to Particle AnalysisSurface Characterization in the Silicon Cleaning Process by a-UPC; Atmospheric Ultraviolet Photoelectron CountingMicroscopic Analysis of Particle Removal by Gas/Liquid Mixture High-Speed FlowKelvin-SPV Measurements of Atomically-Flat Si(111) Surfaces Contaminated with Metallic IonsComparison of Analytical Methods for Residue Detection of Resist Removal ProcessesDry Cleaning Technologies Using UV-Excited Radicals and Cryogenic AerosolsA New HF Vapor Process for Native Oxide Removal, Suited for Cluster ApplicationsSilicon Surface Cleaning for Low Temperature Silicon Epitaxial GrowthRole of UV/Chlorine Exposure during Dry Surface Conditioning before Integrated Epi Deposition ProcessElectrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning MethodsEnergy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO2/Si InterfaceMetal Enhanced Oxidation of SiliconEffect of Si Surface Roughness on the Current-Voltage Characteristics of Ultra-Thin Gate OxidesInfrared Absorption Studies of Wet Chemical Oxides: Thermal Evolution of ImpuritiesX-Ray Photoelectron Study of Gate Oxides and NitridesEvaluation of C3F8 as an In-Situ Cleaning Gas for PECVD ToolsGeneration at Point-of-Use of BHFCharacterization of HF Cleaning of Ion-Implanted Si SurfacesDetermination of SC1 Etch Rates at Low Temperatures with Microscope InterferometryImpact of Trace Metals in Litho ChemicalsPost Metal Etch Polymer Removal: An Investigation of Parameters that Influence CorrosionA Process Using Ozonated Water Solutions to Remove Photoresist after MetallizationThe Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface
