Growth and Application of AlN Single Crystal

2025
ISBN: 978-981-97-8264-2
Verlag: Springer Nature Singapore

Buch, Englisch, 177 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 486 g

Reihe: Wide Bandgap Semiconductors

This book covers the rapidly developing field of AlN research and some of its technical applications. In this book, the development of aluminium nitride from single crystal growth to device applications is comprehensively presented. Single crystal AlN growth includes bulk single crystal growth, single crystal thick film growth and single crystal thin film growth involving physical vapor deposition technology, hydride vapor phase epitaxy and metal-organic chemical vapor deposition technology. In terms of devices, AlN basic UV LED and power electronics devices are discussed. This book can provide researchers, engineers and graduate students with a wealth of new discoveries, results, information and knowledge in the field of AlN single crystal materials.

Zielgruppe

Research

Autoren/Hrsg.

Huang, Jun

Xu, Ke

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie

Inhaltsverzeichnis

Basic Properties of Ain Single Crystal.- Physical Basis for the Growth of Ain Single Crystal.- Defects in Ain Single Crystal.- Growth of Ain Bulk Crystal by Physical Vapor Transport.- Growth of Thick Ain Layers by Hydride Vapor Phase Epitaxy.- Growth of Thin Ain Layers by Metal Organic Chemical Vapor Deposition.- Aluminium Nitride based Semiconductor Devices.

Über Autor(innen)

Ke Xu has been engaged in the growth and equipment research of Nitride semiconductor materials for a long time. He has systematically studied the growth of Gallium Nitride materials. He has successfully developed high quality complete 2-inch single crystal gallium nitride substrate and achieved industrial preparation,and the key technology of 6-inch GaN single crystal has been broken through in recent years. Aiming at the cutting-edge research of nanomaterials and devices, the comprehensive photoelectric testing technology and equipment for spatial resolution of nanometer scale are developed. The spatial resolution can reach 30nm, and the photogenerated carrier distribution near a single dislocation can be measured. Published more than 130 papers, applied for more than 100 patents, and made more than 20 invited presentations at international conferences. He is a co-chair of the International Conference of Nitride Semiconductor (ICNS) to be held in Fukuda, Japan in 2023, which is themost important international conference on third-generation semiconductors

Jun Huang worked as a research fellow at JiuFengShan Laboratory in Hubei, China, where he is currently a materials center specialist. His research interests include wide band semiconductor materials such as AlN, GaN, Ga2O3 and diamond. He has published or co-authored more than 50 papers in journals and one monograph in Chinese.