Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design
1. Auflage 2022
ISBN: 978-3-030-77732-6
Verlag: Springer International Publishing

Buch, Englisch, 188 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 355 g

This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.

- Describes in detail a new industry standard for GaN-based power and RF circuit design;
- Includes discussion of practical problems and theirsolutions in GaN device modeling;
- Covers both radio-frequency (RF) and power electronics application of GaN technology;
- Describes modeling of both GaN RF and power devices.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Khandelwal, Sourabh

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik
• Mathematik | Informatik EDV | Informatik Informatik Mensch-Maschine-Interaktion Ambient Intelligence, RFID, Internet der Dinge
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Introduction.- GaN Device Operation.- Introduction to device modeling.- Industry standard ASM-HEMT compact model – Introduction.- Core charge and current model in ASM-HEMT model.- Real device effects model in ASM-HEMT model.- Radio-frequency GaN modeling with ASM-HEMT model.- Power GaN device modeling with ASM-HEMT model.- Model quality testing.- Design-Technology Co-optimization with ASM-HEMT model.

Über Autor(innen)

Sourabh Khandelwal is Senior Lecturer at the School of Engineering at Macquarie University Sydney. . He is the lead developer of ASM--HEMT compact model, which is a new industry standard compact model for GaN RF and power devices. Earlier to this role,   Manager of Berkeley Device Modeling Center and Postdoctoral Researcher at the BSIM group at University of California Berkeley. Before that, he worked as Research Engineer at IBM Semiconductor Research. He has over 200 publications in top-tier conferences and journals in the area of semiconductor device modeling and circuit design..