Gettering and Defect Engineering in Semiconductor Technology

Erscheinungsjahr 1991
ISBN: 978-3-03859-616-5
Verlag: Trans Tech Publications

Sonstiges, Englisch, 660 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

The volume contains 78 contributions to the important field of semiconductor defect control and defect engineering.

Autoren/Hrsg.

Kittler, M.

Richter, H.

Inhaltsverzeichnis

Intrinsic/Internal Gettering in Czochralski Silicon WafersDefects and impurities in Multi Layer Structures on Si: The Role of Mechanical Stresses in Gettering of Defects and Impurities by Intrinsic and Extrinsic Grain BoundariesPrecipitation of Iron in Silicon: Gettering to Extended Surface Defects SitesGettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Assessment of Thermal StabilityGettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Dependence on Oxide Particle Density and Cooling RateOn the Role of Stacking Faults in Copper Precipitation in SiliconTEM Studies of the Gettering of Copper, Palladium and Nickel in Czochralski Silicon by Small Oxide ParticlesAn Influence of Carbon on Intrinsic Gettering Quality and Circuit PerformanceIntrinsic Gettering in Nitrogen-Doped Cz-SiApplication of Doped Polysilicon Layers in a BICMOS-TechnologySelf-Interstitial Atoms and Structure of Intrinsic Getter in Silicon CrystalsInternal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SIIntrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing DefectsDefect Engineering in Submicron CMOS TechnologiesContamination Control in Si ULSI-Technology at the 1011cm-3 - Level and belowPoint Defect Engineering for ULSI Silicide ProcessingDefect Control and Gettering in Cz-SiliconSilicon Device Engineering by Intrinsic Point Defect ControlDefect Engineering in a High-Voltage Substrate TechnologyThermal Wafer Warpage and its AvoidanceDefects in Crystalline Silicon - History and OutlookDefect Spectroscopy in Compound SemiconductorsFormation and Defect Structure of FeIn Pairs in SiliconEPR Identification of Mn- or Cr-Acceptor Pairs in SiliconThe Influence of RTA on Deep States in Si-Implanted GaAs MESFET Structures Investigated by DLTS and ODLTSStudy of Electron and Hole Emission from Deep States in Undoped Semi-Insulating GaAs by PICTS and Photo-DLTS'New Donors' in Heat-Treated Cz-Si - What is Really New There?The Thermal Acceptor in Nitrogen Doped Cz SiliconOn Carbon-Implantation Induced Donors in SiliconA Search on the Identity of the Ev+0.34 eV C-Related Defect in p-SiSimulation of Hydrogen Diffusion in n and p Type Silicon: Determination of Kinetic and Thermodynamic ParametersHydrogen Passivation of Grain Boundaries in Polysilicon: Computer SimulationModification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High TemperaturesSimulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon WafersDopant Deactivation and Electrically Active Defects Induced in Silicon by CF4 and CBrF3 Plasma EtchingFormation and Properties of Metastable Silicide Precipitates in SiliconMechanical Behaviour of Semiconductors in Terms of Dislocation DynamicsDislocation Kink Dynamics and Gettering Processes in SemiconductorsLocal Distribution of Structure Defects Induced by Microhardness Indentation in GaAsDynamics of a Dislocation in the Potential Relief of Semiconductor Crystals under Varying Applied ForcesPeculiarities of Dislocation Luminescence of Covalent SemiconductorsDefects in Multicrystalline SiliconOrigin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAsElectrical Properties of Dislocation Impurity Atmospheres in SiElectrical Properties of Defects in Multicrystalline SiliconProcess Induced Defects in TiSi2-N+/P-StructuresEvolution of Process - Induced Defects in Silicon under Hydrostatic PressureEvolution of Monoclinic SiAs Precipitates in Heavily As+ Implanted and Isothermally Annealed SiliconDefect Structures in Si Preamorphized WafersBehavior of Implanted Nitrogen in Si with the Buried Layer of SiO2 PrecipitatesInteraction of Implanted into Silicon Fluorine with Radiation DefectsElectrical Activity of Halogen-Silicon ComplexesRadiation Defect-Induced Optical Absorption of GaPSynchrotron Radiation X-Ray Topography of Growth Striations in Magnetic-Field-Applied Czochralski SiliconApplications of In Situ Transmission Electron Microscopy to the Characterization of Process-Induced DefectsTEM Techniques for 2D Junction Delineation and Correlation with SIMS and SRPDefect Generation in Cz-Silicon Used for the Design of Synchrotron Monochromator CrystalsX-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial StructuresGrazing Incidence Diffraction X-Ray Topography Indirect Excitations in the X-Ray Standing Wave MethodDouble-Channel X-Ray Standing Wave Technique for Impurity Atom Location in Multicomponent CrystalsSpectroscopical and Electrical Evidences about Segregation Effects in SemiconductorsDLTS of High-Resistivity SiEvaluation of DLTS Measurements in the Case of "Broadened" Spectra or a Barrier Limited Capture ProcessB-Ion Implantation into Mo-Film for Shallow Junction Formation: DLTS Analyses on the p+/n Fabricated DiodesElectrical Evaluation of Silicon on Insulator Structures Formed by Oxygen Implantation by Means of Frequency Resolved Photoconductivity MeasurementsNonlinear Recombination and Diffusion Processes in Si and GaAsCarrier Recombination Processes in PbTe Films by Picosecond IR ExcitationInvestigation on Electrical Contacts on N-Type SiliconDiagnostics of Defects from the Noise SpectraStatistical Analysis of the Assembly-Induced Degradation of the Silicon Device ParametersMechanical Strain Relaxation during Lattice-Mismatched Epitaxial GrowthInterfacial Dislocations in the GaSb/GaAs (001) HeterostructureSi/Ge - Heterostructures - Stability of Strained Layer SuperlatticesDistribution of Defects in InAs1-x-ySbxPy-InAs DHsNature of Defects in MOCVD Grown GaAlAs-GaAs QW DHsXPS Sputter Depth Profiling Applid to the Analysis of Si/SiO2, Si/SiOxNy and Si/Si3N4Electrical Stability of Thin Nitroxide Layers on Silicon after RTO/RTN/RTO-TreatmentGermanium and Antimony Epitaxy with Large Lattice MisfitTEM Investigations on the Structure and Stability of Diffusion Barriers for VLSI ContactsDefect Characterization of Thick SOI-Layers and Eptaxial Grown Layers on SOI SubstratesSOI by Silicon Wafer Direct Bonding - Problems of Wafer Warpage and Surface ChemistryTemperature Profiles Induced by Recrystallization of Silicon-on-Insulator with Scanning Incoherent Light Line SourceZinc and Zinc-Impurity Pairs in Silicon