Beyond the Desert 99

Accelerator, Non-accelerator and Space Approaches into the Next Millennium, Second International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 6-12 June 1999
1. Auflage 2000
ISBN: 978-0-7503-0731-4
Verlag: Taylor & Francis Ltd

Buch, Englisch, 1268 Seiten, Format (B × H): 162 mm x 241 mm, Gewicht: 2177 g

Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.

Zielgruppe

Professional

Autoren/Hrsg.

Klapdor-Kleingrothaus, H. V.

Fachgebiete

• Naturwissenschaften Chemie Analytische Chemie Massenspektrometrie, Spektroskopie, Spektrochemie
• Naturwissenschaften Physik Quantenphysik Atom- und Molekülphysik
• Naturwissenschaften Physik Quantenphysik Radioaktivität
• Naturwissenschaften Physik Quantenphysik Teilchenphysik
• Naturwissenschaften Physik Quantenphysik Hochenergiephysik

Inhaltsverzeichnis

Introduction. Group IV alloy layers: growth and characterization. HBT principles. Model formulation. HBT: Device design and simulation. Strained-Si heterostructure FETs. Device design and simulation. Simulation applications: examples. SiGe HBT applications. Index.

Über Autor(innen)

H. V. Klapdor-Kleingrothaus