Silicon Carbide and Related Materials 2012
Erscheinungsjahr 2013
ISBN: 978-3-03785-624-6
Verlag: Trans Tech Publications
Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 -6, 2012, St. Petersburg, Russian Federation
Buch, Englisch, 1200 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 2200 g
ISBN: 978-3-03785-624-6
Verlag: Trans Tech Publications
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Growth of 4H-SiC in Current-Controlled Liquid Phase EpitaxyGrowth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the CrucibleSiC Single Crystal Growth on Dual Seed with Different Surface PropertiesEffect of Surface Polarity on the Conversion of Threading Dislocations in Solution GrowthMorphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis SubstratesGrowth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C SolutionApplication of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk GrowthInvestigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si SolventReal-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiCPolycrystalline SiC as Source Material for the Growth of Fluorescent SiC LayersOn Peculiarities of Defect Formation in 6?-SiC Bulk Single Crystals Grown by PVT MethodAbsence of Back Stress Effect in the PVT Growth of 6H Silicon CarbideModeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation EpitaxyThe Study of the Geometry and Growth Trend of Silicon Carbide CrystalsStructural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation MethodGrowth of Large Diameter 4H-SiC by TSSG TechniqueSiC Sublimation Growth at Small Spacing between Source and SeedHigh-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based MeltThe Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVTSublimation Growth of AlN and GaN Bulk Crystals on SiC SeedsGrowth of Low-Defect SiC and AlN Crystals in Refractory Metal CruciblesDefect Generation Mechanisms in PVT-Grown AlN Single Crystal BoulesSublimation Growth of Bulk AlN Crystals on SiC SeedsGrowth of (0001) AlN Single Crystals Using Carbon-Face SiC as SeedsAlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) PseudosubstratesEffect of a Gas Pressure on the Growth Rate of AlN LayerImpact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVDOptimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel SilicidationRaman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar EnvironmentA DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC SubstratesGraphene-on-Porous-Silicon Carbide StructuresLow-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiCEnergy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of StatesHigh Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact InterfacesSilicon Nitride as Top Gate Dielectric for Epitaxial GrapheneThickness Uniformity and Electron Doping in Epitaxial Graphene on SiCSurface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene PropertiesStudy of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon GasFast Growth Rate Epitaxy by Chloride PrecursorsOn-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power ApplicationsStudy of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS TransportLow Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor DepositionStep-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis SubstratesReduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiCThe Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-AngleStep-Bunching Free and 30 ?m-Thick SiC Epitaxial Layer Growth on 150 mm SiC SubstrateStep Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiCRole of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiCVapor-Phase Catalyst Delivery Method for Growing SiC NanowiresSimulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiCThe Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiCUniformity and Morphology of 10 x 100mm 4? Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device PerformanceSurface Preparation of 4? Off-Axis 4H-SiC Substrate for Epitaxial GrowthStudy of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide FilmsAmorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas10 ? 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary ReactorDefect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching MethodLow Temperature Homoepitaxial Growth of 4H-SiC on 4? Off-Axis Carbon-Face Substrate Using BTMSM SourceMorphology Optimization of Very Thick 4H-SiC Epitaxial Layers3C-SiC Heteroepitaxy on Hexagonal SiC Substrates3C-SiC Growth on (001) Si Substrates by Using a Multilayer BufferHeteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM InvestigationsInnovative 3C-SiC on SiC via Direct Wafer BondingTowards Bulk-Like 3C-SiC Growth Using Low Off-Axis SubstratesColor Chart for Thin SiC Films Grown on Si SubstratesDefect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by SublimationPlasma Treatment of 3C-SiC SurfacesStructural Characterization of 3C-SiC Grown Using MethyltrichlorosilaneMonte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide PolytypesPost-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual StressElaboration of Core Si/Shell SiC NanowiresBulk 3C-SiC Crystal by Top Seeded Solution Growth MethodMicrosecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation EpitaxyStructural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC SubstratesExploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon PrecursorsHigh-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Siliconp-Doped SiC Growth on Diamond Substrate by VLS TransportPolytype Inclusions in Cubic Silicon CarbideRotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam EpitaxyPhotoluminescence of 8H-SiCP-6H-SiC Conductivity Compensation after Irradiation of 8MeV ProtonsRaman Investigation of Aluminum-Doped 4H-SiCAn EPR Study of Defects in Neutron-Irradiated Cubic SiC CrystalsAn Extended EDMR Setup for SiC Defect CharacterizationComparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton IrradiationDeep Levels in P-Type 4H-SiC Induced by Low-Energy Electron IrradiationDetermination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiCDiffusion Study of Chlorine in SiC by First Principles CalculationsElectron Paramagnetic Resonance Studies of Nb in 6H-SiCEPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC NanostructureKinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)Lateral Boron Distribution in Polycrystalline SiC Source MaterialsOptical Characterization of Compensating Defects in Cubic SiCOptical Properties of the Niobium Centre in 4H, 6H, and 15R SiCOrigins of Negative Fixed Charge in Wet Oxidation for SiCPersistent Photoconductivity in p-Type 4H-SiC Bulk CrystalsPhotoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC CrystalsPhotoluminescence Topography of Fluorescent SiC and its Corresponding Source CrystalsPoint Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum StatesStudy on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin FilmsSubsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted PolishingSuperhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR SpectroscopyTemperature Dependence of Raman Scattering in 4H-SiCThe Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC SamplesThe Integrated Evaluation Platform for SiC Wafers and Epitaxial FilmsTheoretical Study of N Incorporation Effect during SiC OxidationTo the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide PolytypesA Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap MeasurementsA New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive StrainCharacterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen SensorsDeep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiCDislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman SpectroscopyEffect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC ContactsEffect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC LayersEffects of Growth Parameters on SiC/SiO2 Core/Shell Nanowires Radial StructuresElectron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated TemperaturesImpact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on SiliconImprovement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) FaceStudy of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred EtchingXPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted PolishingElectrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-EpiHall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel ImplantationInterface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs ? A Combined DCIV/SDR StudyVerification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel MosfetsCorrelation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC MosfetsCharacterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping TechniqueEvaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping MeasurementsA Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETsGate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature StressEvidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low TemperaturesBoron Diffusion in Silicon CarbideRecombination and Excess Currents in 4H-SiC Structure with Low-Doped n-RegionTemperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray AbsorptionA Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single CrystalsAluminum Implantation in 4H-SiC: Physical and Electrical PropertiesCharacterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence SpectroscopyComparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen GasesComplex Study of SiC Epitaxial FilmsContact-Free Micropipe Reactions in Silicon CarbideConversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High TemperaturesDielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) SubstratesEdge Termination Design Improvements for 10 kV 4H-SiC Bipolar DiodesEffects of Al Ion Implantation on 3C-SiC Crystal StructureElectrical Characterisation of Epitaxially Grown 3C-SiC FilmsElectrical Properties of MOS Structures on 4H-SiC (11-20) FaceElectrophysical and Optical Properties of 4H-SiC Irradiated with Xe IonsFormation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4? Off-Axis 4H-SiC SubstratesInfluence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiCInfluence of Growth Temperature on Carrier Lifetime in 4H-SiC EpilayersIntroducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles StudyLaplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 CenterOrigin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray TopographyPhotoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC EpilayersPiezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVDRadiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle IrradiationReliability Investigation of Drain Contact Metallizations for SiC-MOSFETsStability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC DevicesStress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element ModelingStudy of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe4H-SiC Trench MOSFET with Thick Bottom OxideAn Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) RectifierCharacterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS StructuresEffect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS DevicesA Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETsInfluence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide ReliabilityInvestigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETsSimulation and Optimization of 4H-SiC DMOSFET Power TransistorsEffects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC InterfacesEffects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC InterfacesEffect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC InterfaceImproved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 AnnealingInfluence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS StructureEffect of Suppressing Reoxidation at SiO2/SiC Interface during Post-Oxidation Annealing in N2O with Al2O3 Capping LayerNovel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal AnnealingRelation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide ReliabilitySodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC InterfaceThe Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS InterfaceEfficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time MapsTransition Metal Oxide-Diamond Interfaces for Electron Emission ApplicationsAl+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic ContactsAlloying of Ohmic Contacts to n-Type 4H-SiC via Laser IrradiationPotentialities of Nickel Oxide as Dielectric for GaN and SiC Devices4H-SiC Trench Schottky Diodes for Next Generation ProductsDevelopment of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial GrowthEffect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFETFilling of Deep Trench by Epitaxial SiC GrowthNi, NiSi2 and Si Secondary Ohmic Contacts on SiC with High Thermal StabilityOptimization of Copper Top-Side Metallization for High Performance SiC-DevicesPreparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS StructureProcess Variation Tolerant 4H-SiC Power Devices Utilizing Trench StructuresBasic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC WaferComparative Study on Dry Etching of a- and ?-SiC Nano-PillarsFirst Experimental Functionalization Results of SiC Nanopillars for Biosensing ApplicationsICP Etching of 4H-SiC SubstratesLarge-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 ?CModel Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission ModelInfluence of Contact Metallisation on the High Temperature Characteristics of High-? DielectricsMulti-Wire Electrical Discharge Slicing for Silicon CarbideSlicing of Rotating SiC Ingot by Electric Discharge MachiningStudy on Reactive Species in Catalyst-Referred Etching of 4H?SiC using Platinum and Hydrofluoric AcidPressureless Silver Sintering Die-Attach for SiC Power DevicesProcess Tolerant Single Photolithography/Implantation 120-Zone Junction Termination ExtensionSolar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiCSubnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction DiodeSiC High Power Devices ? Challenges for Assembly and Thermal ManagementRemarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack ContactsReverse Leakage Currents in High-Voltage 4H-SiC Schottky DiodesElectrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS DiodesComparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiCCharge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature ApplicationsSXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kVInfluence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier LifetimeDevelopment of High-Voltage 4H-SiC PiN Diodes on 4? and 8? Off-Axis SubstratesElectrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFETReliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing EventsA 69-mO 600-V-Class Hybrid JFETThermal Runaway Robustness of SiC VJFETsReliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency NoiseDesign and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFETSteady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FETEvaluation of the Drive Circuit for a Dual Gate Trench SiC JFETOn-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs15 kV IGBTs in 4H-SiCFabrication of a P-Channel SiC-IGBT with High Channel MobilityExperimental Study of Short-Circuit Capability of Normally-off SiC-BGSITsHigh-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications1200 V, 3.3 mO SiC Bipolar Junction Transistor Power ModulesArea-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off ThyristorsDevelopment of High-Voltage 4H-SiC GTOs for Grid-Tied Solar InvertersPulse Current Characterization of SiC GTO Thyristors with Etched JTEOptical Triggering of 12 kV 1 cm2 4H-SiC ThyristorsOptimization of Holding Current in 4H-SiC ThyristorsMicromechanics Based on Silicon CarbideHigh Temperature SiC Sensor with an Isolated PackageBipolar Conduction across a Wafer Bonded p-n Si/SiC HeterojunctionSuperfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiCSelective 4H-SiC UV DetectorsFull Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon CarbideFabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiCProperties of Graphene Side Gate TransistorsInvestigation of Die Attach for SiC Power Device for 300?C ApplicationsInsulating Properties of Package for Ultrahigh-Voltage, High-Temperature DevicesPower Module Package Structure Capable of Surviving Greater ?Tj Thermal CyclesElectromagnetic Interference in Silicon Carbide DC-DC Converters4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET TechnologyComplementary JFET Logic for Low-Power Applications in Extreme EnvironmentsPWM Power Supply Using SiC RESURF JFETs with High Speed SwitchingHigh-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFETHigh Temperature Digital and Analogue Integrated Circuits in Silicon CarbideVertical Channel Silicon Carbide JFETs Based Operational AmplifiersSilicon Carbide Multilevel Converters for Grid-Connected PV ApplicationsA Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC InverterOn the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCADA Simplified Model for SiC Power Diode Modules for Implementation in Spice Based SimulatorsAn Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier DidoesModeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETsCompact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved PerformanceSimulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift LayerThe Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier DiodesAlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency PerformanceSiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors
