Lutz / Schlangenotto / Scheuermann Semiconductor Power Devices

Physics, Characteristics, Reliability
1. Auflage 2011
ISBN: 978-3-642-11125-9
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 536 Seiten, eBook

Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.

Josef Lutz joined Semikron in Nuremberg, Germany, in 1983. First he worked in the development of GTO thyristors, then in the field of fast recovery diodes. He introduced the Controlled Axial Lifetime (CAL) diode, is holder of several patents regarding fast diodes, and has published more than 100 papers and conference contributions. In 1999 he received his Ph.D. in electrical engineering at the University of Ilmenau, Germany. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at the Chemnitz University of Technology, Germany. He is member of the board of directors of the ZfM, of the International Steering Committee of the EPE, advisory board of the PCIM, of the program committee of the ISPS and CIPS. In 2005 he was awarded the rank of an honourable professor at the North Caucasus State Technical University in Stavropol. Uwe Scheuermann joined Semikron in Nuremberg, Germany, after completing his Ph.D. in semiconductor physics in 1990. After spending 5 years with the development of diode and thyristor chips, he changed his focus to the development of power modules. He has been involved in the development of the advanced power module families without base plates and the implementation of new packaging concepts like spring contacts. He has published more than 30 papers and holds several patents in the field of packaging technology. Today, he is at Semikron responsible for the reliability of components. He is a member of the board of directors of the PCIM Europe and of the program committee of the CIPS. Since 2006 he is engaged as an external lecturer at the Friedrich-Alexander-University of Erlangen. Rik De Doncker received his degree of Doctor in Electrical Engineering from the Katholieke Universiteit Leuven, Belgium in 1986. During 1987 he was appointed Visiting Associate Professor at the University of Wisconsin, Madison. In 1988, he was employed as a General Electric Company fellow at the microelectronic center IMEC, Leuven, Belgium. In Dec. 1988, he joined the General Electric Company at the Corporate Research and Development Center, Schenectady, NY where he led research on drives and high power soft-switching converters, ranging from 100 kW to 4 MW, for aerospace, industrial and traction applications. In 1994 he joined Silicon Power Corporation (formerly GE-SPCO) as Vice President Technology where he worked on high power converter systems and MTO devices and was responsible for the development and production of world's first 15 kV medium voltage transfer switch. Since Oct. 1996 he became professor at the RWTH-Aachen, where he leads the Institute für Stromrichtertechnik und Elektrische Antriebe (ISEA). In Oct. 2006 he became director of the E.ON Energy Research Center at RWTH Aachen University. Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of Münster, in 1966 he joined the Research Institute of AEG-Telefunken in Frankfurt. Working on operation principles of semiconductor power devices, he improved the description of forward conduction based on a new insight in the spatial distribution of recombination. Investigating the injection and temperature dependence of radiative recombination, which is used in analyzing device operation, he finds an important influence of exciton formation even near room temperature. A major point of his work was the development of device concepts such as the fast, soft recovery SPEED-diode. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. From 1991 to 2001 he held a lecture on power devices at the Technical University of Darmstadt. His results were published in many papers and conference reports.

Zielgruppe

Research

Autoren/Hrsg.

Lutz, Josef

Schlangenotto, Heinrich

Scheuermann, Uwe

De Doncker, Rik

Inhaltsverzeichnis

1;Semiconductor Power Devices;1
2;Preface;4
3;Contents;6
4;Chapter 1 Power Semiconductor Devices Key Components for Efficient Electrical Energy Conversion Systems;12
4.1;1.1 Systems, Power Converters, and Power Semiconductor Devices;12
4.1.1;1.1.1 Basic Principles of Power Converters;14
4.1.2;1.1.2 Types of Power Converters and Selection of Power Devices;15
4.2;1.2 Operating and Selecting Power Semiconductors;18
4.3;1.3 Applications of Power Semiconductors;21
4.4;References;25
5;Chapter 2 Semiconductor Properties;27
5.1;2.1 Introduction;27
5.2;2.2 Crystal Structure;29
5.3;2.3 Energy Gap and Intrinsic Concentration;31
5.4;2.4 Energy Band Structure and Particle Properties of Carriers;36
5.5;2.5 The Doped Semiconductor;40
5.6;2.6 Current Transport;49
5.6.1;2.6.1 Carrier Mobilities and Field Currents;49
5.6.2;2.6.2 High-Field Drift Velocities;55
5.6.3;2.6.3 Diffusion of Carriers and Current Transport Equations;56
5.7;2.7 Recombination-Generation and Lifetime of Non-equilibrium Carriers;58
5.7.1;2.7.1 Intrinsic Recombination Mechanisms;60
5.7.2;2.7.2 Recombination and Generation at Recombination Centers;61
5.8;2.8 Impact Ionization;70
5.9;2.9 Basic Equations of Semiconductor Devices;76
5.10;2.10 Simple Conclusions;79
5.11;References;82
6;Chapter 3 pn-Junctions;86
6.1;3.1 The pn-Junction in Thermal Equilibrium;86
6.1.1;3.1.1 The Abrupt Step Junction;89
6.1.2;3.1.2 Graded Junctions;95
6.2;3.2 CurrentVoltage Characteristics of the pn-Junction;98
6.3;3.3 Blocking Characteristics and Breakdown of the pn-Junction;107
6.3.1;3.3.1 Blocking Current;107
6.3.2;3.3.2 Avalanche Multiplication and Breakdown Voltage;110
6.3.2.1;Temperature Dependence ;118
6.3.3;3.3.3 Blocking Capability with Wide-Gap Semiconductors;119
6.4;3.4 Injection Efficiency of Emitter Regions;120
6.5;3.5 Capacitance of pn-Junctions;127
6.6;References;129
7;Chapter 4 Short Introduction to Power Device Technology;131
7.1;4.1 Crystal Growth;131
7.2;4.2 Neutron Transmutation for Adjustment of the Wafer Doping;134
7.3;4.3 Epitaxial Growth;136
7.4;4.4 Diffusion;137
7.5;4.5 Ion Implantation;142
7.6;4.6 Oxidation and Masking;147
7.7;4.7 Edge Terminations;150
7.7.1;4.7.1 Bevelled Termination Structures;150
7.7.2;4.7.2 Planar Junction Termination Structures;152
7.7.3;4.7.3 Junction Termination for Bidirectional Blocking Devices;154
7.8;4.8 Passivation;155
7.9;4.9 Recombination Centers;156
7.9.1;4.9.1 Gold and Platinum as Recombination Centers;156
7.9.2;4.9.2 Radiation-Induced Recombination Centers;159
7.9.3;4.9.3 Radiation-Enhanced Diffusion of Pt and Pd;162
7.10;References;163
8;Chapter 5 pin-Diodes;166
8.1;5.1 Structure of the pin-Diode;166
8.2;5.2 I-V Characteristic of the pin-Diode;167
8.3;5.3 Design and Blocking Voltage of the pin-Diode;169
8.4;5.4 Forward Conduction Behavior;174
8.4.1;5.4.1 Carrier Distribution;174
8.4.2;5.4.2 Junction Voltages;177
8.4.3;5.4.3 Voltage Drop Across the Middle Region;179
8.4.4;5.4.4 Voltage Drop in the Hall Approximation;180
8.4.5;5.4.5 Emitter Recombination, Effective Carrier Lifetime, and Forward Characteristic;182
8.4.6;5.4.6 Temperature Dependency of the Forward Characteristics;190
8.5;5.5 Relation Between Stored Charge and Forward Voltage;191
8.6;5.6 Turn-On Behavior of Power Diodes;192
8.7;5.7 Reverse Recovery of Power Diodes;195
8.7.1;5.7.1 Definitions;195
8.7.2;5.7.2 Reverse Recovery Related Power Losses;201
8.7.3;5.7.3 Reverse Recovery: Charge Dynamic in the Diode;205
8.7.4;5.7.4 Fast Diodes with Optimized Reverse Recovery Behavior;213
8.7.4.1;5.7.4.1 Diodes with a Doping Step in the Low-Doped Layer;213
8.7.4.2;5.7.4.2 Diodes with Anode Structures for Improving the Recovery Behavior;214
8.7.4.3;5.7.4.3 The EMCON Diode;216
8.7.4.4;5.7.4.4 The CAL Diode CAL-diode ;218
8.7.4.5;5.7.4.5 The Hybrid Diode;220
8.7.4.6;5.7.4.6 The Tandem Diode;222
8.7.4.7;5.7.4.7 MOS-Controlled Diodes;223
8.7.4.8;5.7.4.8 Diodes with Cathode Side Hole Injection;228
8.8;5.8 Outlook;229
8.9;References;230
9;Chapter 6 Schottky Diodes;232
9.1;6.1 Aspects of the Physics of the MetalSemiconductor Junction;232
9.2;6.2 CurrentVoltage Characteristics of the Schottky Junction;234
9.3;6.3 Structure of Schottky Diodes;237
9.4;6.4 Ohmic Voltage Drop of a Unipolar Device;237
9.4.1;Example: Design of a Silicon Schottky Diode for a Rated Voltage of 200 V;240
9.5;6.5 Schottky Diodes Based on SiC;241
9.6;References;246
10;Chapter 7 Bipolar Transistors;248
10.1;7.1 Function of the Bipolar Transistor;248
10.2;7.2 Structure of the Bipolar Power Transistor;250
10.3;7.3 I-V Characteristic of the Power Transistor;251
10.4;7.4 Blocking Behavior of the Bipolar Power Transistor;252
10.5;7.5 Current Gain of the Bipolar Transistor;254
10.6;7.6 Base Widening, Field Redistribution, and Second Breakdown;258
10.7;7.7 Limits of the Silicon Bipolar Transistor;261
10.8;7.8 SiC Bipolar Transistor;262
10.9;References;263
11;Chapter 8 Thyristors;264
11.1;8.1 Structure and Mode of Function;264
11.2;8.2 I-V Characteristic of the Thyristor;267
11.3;8.3 Blocking Behavior of the Thyristor;269
11.4;8.4 The Function of Emitter Shorts;271
11.5;8.5 Modes to Trigger a Thyristor;272
11.6;8.6 Trigger Front Spreading;273
11.7;8.7 Follow-Up Triggering and Amplifying Gate;274
11.8;8.8 Thyristor Turn-Off and Recovery Time;277
11.9;8.9 The Triac;279
11.10;8.10 The Gate Turn-Off Thyristor (GTO);280
11.11;8.11 The Gate-Commutated Thyristor (GCT);286
11.12;References;288
12;Chapter 9 MOS Transistors;290
12.1;9.1 Function Principle of the MOSFET;290
12.2;9.2 Structure of Power MOSFETs;292
12.3;9.3 CurrentVoltage Characteristics of MOS Transistors;294
12.4;9.4 Characteristics of the MOSFET Channel;295
12.5;9.5 The Ohmic Region;299
12.6;9.6 Compensation Structures in Modern MOSFETs;300
12.7;9.7 Switching Properties of the MOSFET;305
12.8;9.8 Switching Losses of the MOSFET;309
12.9;9.9 Safe Operating Area of the MOSFET;310
12.10;9.10 The Inverse Diode of the MOSFET;312
12.11;9.11 SiC Field Effect Devices;316
12.12;9.12 Outlook;319
12.13;References;319
13;Chapter 10 IGBTs;322
13.1;10.1 Mode of Function;322
13.2;10.2 The IV Characteristic of the IGBT ;324
13.3;10.3 The Switching Behavior of the IGBT;326
13.4;10.4 The Basic Types: PT-IGBT and NPT-IGBT;328
13.5;10.5 Plasma Distribution in the IGBT;332
13.6;10.6 Modern IGBTs with Increased Charge Carrier Density;334
13.6.1;10.6.1 Plasma Enhancement by High n-Emitter Efficiency;334
13.6.2;10.6.2 The ''Latch-Up Free Cell Geometry'';338
13.6.3;10.6.3 The Effect of the ''Hole Barrier'';339
13.6.4;10.6.4 Collector Side Buffer Layers;341
13.7;10.7 IGBTs with Bidirectional Blocking Capability;342
13.8;10.8 Reverse Conducting IGBT reverse conducting IGBT s ;344
13.9;10.9 Outlook;347
13.10;References;347
14;Chapter 11 Packaging and Reliability of Power Devices;350
14.1;11.1 The Challenge of Packaging Technology;350
14.2;11.2 Package Types;351
14.2.1;11.2.1 Capsules;353
14.2.2;11.2.2 The TO Family and Its Relatives;355
14.2.3;11.2.3 Modules;360
14.3;11.3 Physical Properties of Materials;365
14.4;11.4 Thermal Simulation and Thermal Equivalent Circuits;367
14.4.1;11.4.1 Transformation Between Thermo-dynamicaland Electrical Parameters;367
14.4.2;11.4.2 One-Dimensional Equivalent Networks;374
14.4.3;11.4.3 The Three-Dimensional Thermal Network;376
14.4.4;11.4.4 The Transient Thermal Resistance;377
14.5;11.5 Parasitic Electrical Elements in Power Modules;380
14.5.1;11.5.1 Parasitic Resistances;380
14.5.2;11.5.2 Parasitic Inductance;381
14.5.3;11.5.3 Parasitic Capacities;385
14.6;11.6 Reliability;387
14.6.1;11.6.1 The Demand for Increasing Reliability;387
14.6.2;11.6.2 High Temperature Reverse Bias Test;390
14.6.3;11.6.3 High Temperature Gate Stress Test;392
14.6.4;11.6.4 Temperature Humidity Bias Test;393
14.6.5;11.6.5 High Temperature and Low Temperature Storage Tests;394
14.6.6;11.6.6 Temperature Cycling and Temperature Shock Test;395
14.6.7;11.6.7 Power Cycling Test;397
14.6.7.1;11.6.7.1 Weibull Statistics for Power Cycling Analysis;400
14.6.7.2;11.6.7.2 Models for Lifetime Prediction;401
14.6.7.3;11.6.7.3 Superimposition of Power Cycles;404
14.6.7.4;11.6.7.4 Bond Wire Lift-Off;406
14.6.7.5;11.6.7.5 Reconstruction of Metallization;407
14.6.7.6;11.6.7.6 Solder Fatigue;410
14.6.7.7;11.6.7.7 Power Cycling Capability of Molded TO Package;414
14.6.7.8;11.6.7.8 Comparability of Power Cycling Lifetime Curves;416
14.6.8;11.6.8 Additional Reliability Tests;417
14.6.9;11.6.9 Strategies for Enhanced Reliability;418
14.7;11.7 Future Challenges;419
14.8;References;423
15;Chapter 12 Destructive Mechanisms in Power Devices;426
15.1;12.1 Thermal Breakdown Failures by Excess Temperature;426
15.2;12.2 Surge Current;428
15.3;12.3 Overvoltage Voltage Above Blocking Capability;433
15.4;12.4 Dynamic Avalanche;439
15.4.1;12.4.1 Dynamic Avalanche in Bipolar Devices ;439
15.4.2;12.4.2 Dynamic Avalanche in Fast Diodes;440
15.4.2.1;Dynamic Avalanche of the First Degree;440
15.4.2.2;Dynamic Avalanche of the Second Degree;442
15.4.2.3;Dynamic Avalanche of the Third Degree;444
15.4.3;12.4.3 Diode Structures with High Dynamic Avalanche Capability;449
15.4.4;12.4.4 Dynamic Avalanche: Further Tasks;453
15.5;12.5 Exceeding the Maximum Turn-Off Current of GTOs;453
15.6;12.6 Short-Circuit and Over-Current in IGBTs;454
15.6.1;12.6.1 Short-Circuit Types I, II, and III;454
15.6.2;12.6.2 Thermal and Electrical Stress in Short Circuit;459
15.6.2.1;Thermal Limits for Medium-Voltage IGBTs;462
15.6.2.2;Current Filamentation as Limit for the Short-Circuit Capability of High-Voltage IGBTs;465
15.6.3;12.6.3 Turn-Off of Over-Current and Dynamic Avalanche;467
15.7;12.7 Cosmic Ray Failures;469
15.8;12.8 Failure Analysis;475
15.9;References;477
16;Chapter 13 Power Device-Induced Oscillations and Electromagnetic Disturbances;481
16.1;13.1 Frequency Range of Electromagnetic Disturbances;481
16.1.1;Harmonics;482
16.2;13.2 LC Oscillations;483
16.2.1;13.2.1 Turn-Off Oscillations with IGBTs Connected in Parallel;483
16.2.2;13.2.2 Turn-Off Oscillations with Snappy Diodes;486
16.3;13.3 Transit-Time Oscillations;489
16.3.1;13.3.1 Plasma-Extraction Transit-Time (PETT) Oscillations;489
16.3.2;13.3.2 Dynamic Impact-Ionization Transit-Time (IMPATT) Oscillations;497
16.4;References;501
17;Chapter 14 Power Electronic Systems;502
17.1;14.1 Definition and Basic Features;502
17.2;14.2 Monolithically Integrated Systems Power ICs;504
17.3;14.3 System Integration on Printed Circuit Board;508
17.4;14.4 Hybrid Integration;510
17.5;References;517
18;Appendix A Modeling Parameters of Carrier Mobilities in Si and 4H-SiC;519
18.1;A.1 Mobilities in Silicon;519
18.2;A.2 Mobilities in 4H-SiC;520
19;Appendix B: Avalanche Multiplication Factors and Effective Ionization Rate;521
19.1;B.1 Multiplication Factors;521
19.2;B.2 Effective Ionization Rate and Breakdown Condition;523
19.3;References for Appendices A and B;523
20;Appendix C Thermal Parameters of Important Materials in Packaging Technology;525
21;Appendix D Electric Parameters of Important Materials;526
21.1;References for Appendices C and D;527
22;Appendix E: Often Used Symbols;528
22.1;Remark;530
23;Index;531

Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn - Junctions.- Short introduction to power device technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device Induced Oscillations and Electromagnetic Disturbances.- Power Electronic Systems.- Appendix.- Index.

Über Autor(innen)

Josef Lutz joined Semikron in Nuremberg, Germany, in 1983. First he worked in the development of GTO thyristors, then in the field of fast recovery diodes. He introduced the Controlled Axial Lifetime (CAL) diode, is holder of several patents regarding fast diodes, and has published more than 100 papers and conference contributions. In 1999 he received his Ph.D. in electrical engineering at the University of Ilmenau, Germany. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at the Chemnitz University of Technology, Germany. He is member of the board of directors of the ZfM, of the International Steering Committee of the EPE, advisory board of the PCIM, of the program committee of the ISPS and CIPS. In 2005 he was awarded the rank of an honourable professor at the North Caucasus State Technical University in Stavropol. Uwe Scheuermann joined Semikron in Nuremberg, Germany, after completing his Ph.D. in semiconductor physics in 1990. After spending5 years with the development of diode and thyristor chips, he changed his focus to the development of power modules. He has been involved in the development of the advanced power module families without base plates and the implementation of new packaging concepts like spring contacts. He has published more than 30 papers and holds several patents in the field of packaging technology. Today, he is at Semikron responsible for the reliability of components. He is a member of the board of directors of the PCIM Europe and of the program committee of the CIPS. Since 2006 he is engaged as an external lecturer at the Friedrich-Alexander-University of Erlangen. Rik De Doncker received his degree of Doctor in Electrical Engineering from the Katholieke Universiteit Leuven, Belgium in 1986. During 1987 he was appointed Visiting Associate Professor at the University of Wisconsin, Madison. In 1988, he was employed as a General Electric Company fellow at the microelectronic center IMEC, Leuven, Belgium. In Dec. 1988, he joined the General Electric Company at the Corporate Research and Development Center, Schenectady, NY where he led research on drives and high power soft-switching converters, ranging from 100 kW to 4 MW, for aerospace, industrial and traction applications. In 1994 he joined Silicon Power Corporation (formerly GE-SPCO) as Vice President Technology where he worked on high power converter systems and MTO devices and was responsible for the development and production of world’s first 15 kV medium voltage transfer switch. Since Oct. 1996 he became professor at the RWTH-Aachen, where he leads the Institute für Stromrichtertechnik und Elektrische Antriebe (ISEA). In Oct. 2006 he became director of the E.ON Energy Research Center at RWTH Aachen University. Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of Münster, in 1966 he joined the Research Institute of AEG-Telefunken in Frankfurt. Working on operation principles of semiconductor power devices, he improved the description of forward conduction based on a new insight in the spatial distribution of recombination. Investigating the injection and temperature dependence of radiative recombination, which is used in analyzing device operation, he finds an important influence of exciton formation even near room temperature. A major point of his work was the development of device concepts such as the fast, soft recovery SPEED-diode. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. From 1991 to 2001 he held a lecture on power devices at the Technical University of Darmstadt. His results were published in many papers and conference reports.