Mahajan / Kimerling Concise Encyclopedia of Semiconducting Materials and Related Technologies

1. Auflage 2013
ISBN: 978-1-4832-8657-0
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 607 Seiten, Web PDF

Reihe: Advances in Materials Sciences and Engineering

The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.

Autoren/Hrsg.

Mahajan, S.

Kimerling, Lionel C.

Inhaltsverzeichnis

1;Front Cover;1
2;Concise Encyclopedia of Semiconducting Materials & Related Technologies;4
3;Copyright Page;5
4;Table of Contents;6
5;HONORARY EDITORIAL ADVISORY BOARD;7
6;FOREWORD;8
7;EXECUTIVE EDITOR'S PREFACE;10
8;EDITORS' PREFACE;12
9;GUIDE TO USE OF THE ENCYCLOPEDIA;14
10;ALPHABETICAL LIST OF ARTICLES;16
11;AN INTRODUCTION TO SEMICONDUCTING MATERIALS AND RELATED TECHNOLOGIES;18
12;Chapter A;26
12.1;Atomic Ordering and Phase Separation;26
13;Chapter B;32
13.1;Birefringence in Crystals;32
13.2;Bonding Theories;34
13.3;Bonding Theories: Structure Maps;43
14;Chapter C;52
14.1;Chalcopyrite Semiconductors;52
14.2;Characterization of Compound Semiconductors by Etching;62
14.3;Color and Optical Absorption in Glasses;73
14.4;Connector Materials;76
14.5;Contacts to III–V Semiconductors;82
14.6;Corrosion of Integrated Circuits;87
15;Chapter D;92
15.1;Defects in Epitaxial Layers;92
15.2;Defects in Silicon: Fundamentals;99
15.3;Defects in Silicon: Processing;103
15.4;Defects: Influence on Device Behavior;109
15.5;Deposition of IMetal Films by Laser Pyrolysis;113
15.6;Diamond;116
15.7;Dielectric Films;120
15.8;Dielectric Properties of Polymers;122
15.9;Diffusion in Compound Semiconductors;127
15.10;Diffusion in Silicon;133
15.11;Diluted Magnetic Semiconductors;137
15.12;Dislocations in Semiconductors;142
16;Chapter .;150
16.1;Electrical Laminates;150
16.2;Electrically Conducting Polymers;156
16.3;Electrically Conducting Polymers: Synthesis and Properties;159
16.4;Electrochromic Materials;163
16.5;Electronic and Optical Minerals;165
16.6;Electronic Materials: Nondestructive Evaluation;168
16.7;Electrooptic and Acoustooptic Materials;171
16.8;Electrophotographic Materials;173
16.9;Energy Conversion and Storage: Photoelectrochemical Systems;179
16.10;Epitaxial Metal–Semiconductor Interfaces;183
17;Chapter F;188
17.1;Ferroelastic Materials;188
17.2;Ferroelectric Materials;190
17.3;Fine-Line Lithography;193
17.4;Fine-Line IVIetrology;201
17.5;Flip-Chip Interconnections;209
17.6;Fluorescence Properties of Materials;212
17.7;Fluoride Glasses;215
17.8;Fluoride Glasses: Chemistry, Structure and Optical Properties;218
18;Chapter G;228
18.1;Germanium;228
18.2;Glass Optical Fibers;231
18.3;Grain Boundaries in Semiconductors;235
18.4;Growth of Semiconductor Bulk Single Crystals;242
19;Chapter .;256
19.1;Holographic Materials;256
19.2;Hydrogen in Crystalline Semiconductors;259
19.3;Hydrogenated Amorphous Silicon;263
20;Chapter I;268
20.1;Infrared Laser Window Materials;268
20.2;Interlevel Dielectrics and Passivating Films;270
20.3;Ion Implantation into Ceramics;275
20.4;Ion Implantation of III–V Compounds;280
21;Chapter J;286
21.1;Junction Transient Spectroscopy;286
22;Chapter L;290
22.1;Langmuír–Blodgett Films;290
22.2;Laser Glass;292
22.3;Laser Materials;295
22.4;Liquid Crystals;297
22.5;Liquid Phase Epitaxy;300
22.6;Local Vibrational Mode Spectroscopy of Semiconductors;302
22.7;Luminescence in Glasses;307
23;Chapter .;312
23.1;Magnetooptics;312
23.2;Mechanical Properties of Semiconductors;315
23.3;Metallic Multilayers;320
23.4;Metallic Solid Solutions: Phase Separation;324
23.5;IMolecular Beam Epitaxy;331
23.6;Multilevel Metallization;336
24;Chapter .;342
24.1;Nanocrystalline Materials;342
24.2;Nonlinear Optical Materials;352
25;Chapter O;356
25.1;Optical BistabíUty;356
25.2;Optical Glasses;358
25.3;Optical Thin Films;366
25.4;Optical Thin Films: Production and Use;367
25.5;Organic "Soft" Thin-Film Transistor;372
25.6;Organometallic Vapor Phase Epitaxy;374
25.7;Oxygen in Czochralski Silicon;378
26;Chapter P;384
26.1;Phase Transformations at Surfaces and Interfaces;384
26.2;Photovoltaic Materials;387
26.3;Piezoelectric IVIaterials;394
26.4;Point Defect Equilibria in Semiconductors;397
26.5;Polycrystalline Silicon: Structure and Processing;401
26.6;Polymerization, Plasma-Induced;404
26.7;Pyroelectric Materials;406
27;Chapter Q;410
27.1;Quantum Wells;410
27.2;Quantum Wells: Intrinsic Optical Properties;413
28;Chapter R;418
28.1;Radiation Effects in Polymers;418
28.2;Rapid Thermal Processing;425
28.3;Resist IVIaterials for Lithography;430
29;Chapter S;434
29.1;Schottky Barriers;434
29.2;Self-Focusing Properties of Materials;437
29.3;Semiconductor Heterostructures: Formation of Defects and Their Reduction;439
29.4;II–VI and IV–VI Semiconductors;452
29.5;III–V Semiconductors: Electronic and Optical Properties;462
29.6;III–V Semiconductors: Structure, Crystal Growth and Perfection;468
29.7;Silicon Carbide;476
29.8;Silicon Dioxide: Bulk Properties;480
29.9;Silicon Nitride: Bulk Properties;483
29.10;Silicon-on-Insulator Film Growth;486
29.11;Silicon: Preparation;492
29.12;Silicon: Properties and IVIaterials Specifications;503
29.13;Silicon Semiconductor Devices and Integrated Circuit Processing;517
29.14;Sol–Gel Processes in Glass Making;525
29.15;Solid Conductors;529
29.16;Strained-Layer Superlattices;545
29.17;Stress- and Current-Induced Damage in Thin-Film Conductors;549
30;Chapter T;556
30.1;Thermoelectric Semiconductors;556
30.2;Transition Metal Silicides;558
30.3;Transmission Electron Microscopy of Semiconductors;562
31;Chapter W;568
31.1;Water: Ultrapurification for Microelectronics Processing;568
32;LIST OF CONTRIBUTORS;572
33;SUBJECT INDEX;582