International Conference on Silicon Carbide and Related Materials ICSCRM 2022

Erscheinungsjahr 2023
ISBN: 978-3-0364-0167-6
Verlag: Trans Tech Publications

Buch, Englisch, 836 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1530 g

The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C., USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind – starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide.

Autoren/Hrsg.

Marek, Juraj

Pobegen, Gregor

Grossner, Ulrike

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface
Chapter 1: Growth and Wafer Manufacturing
Epitaxial Growth of Boron Carbide on 4H-SiC
Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
Suppression of In-Grown SF Formation and BPD Propagation in 4H-SiC Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth
Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields

In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
Study of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers
3C-SiC Island Growth on 4H-SiC Terraces: Statistical Evidence for the Orientation Selection Rule
Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
Development of High Quality 8 Inch 4H-SiC Substrates
4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices
Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements
Al Implantation in SiC; Where Will the Ions Come to Rest?
High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas
Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration
Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs
Exploring UV-Laser Effects on Al-Implanted 4H-SiC
Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor
Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
Deep Level Reduction in 4H-SiC Treated by Plasma Immersion
Improving the Polishing Speed and Surface Quality of 4H-SiC Wafers with an MnO2- Based Slurry
Chapter 2: Material Characterization
Temperature Dependent Electrical Properties of N-Type 4H-SiC Substrates
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction
Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiC
Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC
PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators
Selective Oxidation during AFM Electrical Characterization of Doped SiC Layers
Evaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transf