Silicon Carbide MOSFETs and Special Materials

Erscheinungsjahr 2023
ISBN: 978-3-0364-0321-2
Verlag: Trans Tech Publications

Buch, Englisch, 206 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 490 g

This special issue includes results of research and engineering developments in the area of applied materials and technologies for machinery, biomedical application, additive production and power electronics. The special edition will be useful to engineers whose activity is related to the research and development of composite materials, biomaterials and the production of power electronic devices.

Autoren/Hrsg.

Marek, Juraj

Pobegen, Gregor

Grossner, Ulrike

Liang, Steven Y.

Li, Zongjin

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren

Inhaltsverzeichnis

Preface
Chapter 1: Preparation and Properties of Composite Materials
Wear Resistance of Bio-Polymer Composite Base on Cotton Post-Harvest Line Residues
Antibacterial Efficacy of Non-Copper Polymer Based Composite Enhanced with Metallic Particles Using Fused Deposition Modeling
Sintering and Characterization of Alumina Reinforced Tungsten Carbide Cobalt Composite
Conductive Filament Composites from Waste Battery Rod-Derived Exfoliated Graphite for Fused Deposition Modeling 3D Printing: A Two-Level Factorial Design Optimization Study
Chapter 2: Materials for Biomedical Applications
Sol-Gel Derived Bioactive Glasses as Synthetic Bone Substitutes
Characteristics of Bioceramic Hydroxyapatite Based on Sand Lobster Shells (Panulirus homarus) as Sources of Calcium with Optimal Calcination Temperature
Electrospinning of Ternary Aqueous Solutions of Polyvinyl Alcohol, Chitosan and Salicylic Acid
Chapter 3: Functional and Special Materials and Technologies
The Effect of Polymeric Surfactant on Adhesion and Uniformity of Ag-TiO2 Coating on Air Filter with Self-Cleaning Capability
Effects of Dual Moderate-Temperature-Grown AIN Interlayers on Structural and Optical Properties of Semipolar (1122) AIN Film
Direct Ink Writing of Tubular Al2O3 Membrane Support Using Agar-Based Ink in 3D-Printing
Convective Structure of Nematic Liquid Crystal in Parallelepiped Transverse Cell
Effect of Ligand Concentration on the Stability and Copper (II) Sensing Performance of Humic Acid-Functionalized Silver Nanoparticles
Chapter 4: Properties and Production Technologies of Silicon Carbide Metal-Oxide Semiconductors
Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs
Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation
Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide
Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations
The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
NO Annealing Simulation of 4H-SiC/SiO2 by Charge-Transfer Type Molecular Dynamics
Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment
High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition
Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC
Hypothesis to Explain Threshold Drift due to Dynamic Bipolar Gate Stress
Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor
Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Physical Modelling of Charge Trapping Effects in SiC MOSFETs