Silicon Carbide Wafer Manufacturing, Optoelectronic and Electronic Devices and Technologies

Erscheinungsjahr 2023
ISBN: 978-3-0364-0325-0
Verlag: Trans Tech Publications

Buch, Englisch, 122 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 350 g

The special edition includes articles that represented the latest research results and engineering solutions in the area of electronic device design and production. This special edition will be interesting to specialists in semiconductor power device production, microelectronics and optoelectronics.

Autoren/Hrsg.

Marek, Juraj

Pobegen, Gregor

Grossner, Ulrike

Quah, Hock Jin

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Preface
Chapter 1: Silicon Carbide Wafer Manufacturing
Epitaxial Growth of Boron Carbide on 4H-SiC
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
Al Implantation in Sic; Where Will the Ions Come to Rest?
Chapter 2: Electronic Packaging
Analysis of Transmission Performance for Fine Pitch Interconnect
Interfacial Delamination Validation on Fan-Out Wafer-Level Package Using Finite Element Method
Fabrication of Nanocomposite PDMS/Graphene as Flexible Substrate at Different Graphene Volume
Chapter 3: Optoelectronic and Electronic Devices
Performance of MOS Capacitor with Different Dielectric Material Simulated Using Silvaco TCAD Tools
Humidity Sensor Performance Based ZnO/SnO2 Nanorods Structure Using Different ZnO Seed Layer
Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications
Characterization of Breath Sensor at Different Frequencies in Outdoor Condition