Medjdoub Gallium Nitride (GaN)

Physics, Devices, and Technology
Erscheinungsjahr 2015
ISBN: 978-1-4822-2004-9
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 388 Seiten

Reihe: Devices, Circuits, and Systems

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low making it a suitable material for solar cell arrays for satellites. This book covers large aspects of GaN from the fundamental physics of this emerging material to the fabrication of devices and circuits that are already foreseen to replace standard Silicon or GaAs based in many applications.

Autoren/Hrsg.

Medjdoub, Farid

Fachgebiete

• Technische Wissenschaften Sonstige Technologien | Angewandte Technik Lasertechnologie, Holographie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie

Inhaltsverzeichnis

GaN High Voltage Power Devices. AlGaN/GaN High Electron Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy. Gallium Nitride Transistors on Large Diameter Si(111) Substrate. GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications. Group III-Nitride Monolithically Microwave Integrated Circuits (MMICs). GaN-Based Metal-Insulator-Semiconductor-Typed Schottky Hydrogen Sensors. IEMN-CNRS (France), InGaN-Based Solar Cells. CEA-Grenoble (France), III-Nitride Semiconductors: New Infrared Intersubband Technologies. Gallium Nitride- Based Interband Tunnel Junctions. Reliability of GaN Devices.