Growth of Crystals

1996
ISBN: 978-0-306-18120-7
Verlag: Springer US

Buch, Englisch, Band 20, 170 Seiten, HC runder Rücken kaschiert, Format (B × H): 215 mm x 303 mm, Gewicht: 753 g

Reihe: Growth of Crystals

In keeping with tradition, this collection covers three principal crystallization methods: from the vapor, solution, and the melt. The five articles of the first part are concerned with heterostructure formation. O. P. Pchelyakov and L. V. Sokolov report on controlled growth of nanostructures in the Si-Ge system using an array of modern analytical tools to follow the process in situ. A different method for growing quantum-sized Si-Ge structures is used by Mil'vidskii et al., chemical deposition of hydrides from the vapor. Stresses and misfit dislocations in the resulting heterostructures are thoroughly investigated. The theoretical work of E. M. Trukhanov examines the formation mechanism of long-range stresses that produce r -shaped cracks during the growth of thick Ge-Si films. The reasons for the manifestation of macro defects connected with the generation of twins in HgCdTe films are unraveled by Yu. G. Sidorov et al. The conditions under which films with a low defect density grow are found. The preparation of highly oxidized amorphous Nb films and the structures formed during the crystallization of these films are reported by A. A. Sokol et al. Growth from solutions is the subject of the four articles in the second part.

Zielgruppe

Research

Autoren/Hrsg.

Mel'nikova, A. M.

Givargizov, E.I.

Fachgebiete

• Naturwissenschaften Chemie Anorganische Chemie Komplexchemie
• Naturwissenschaften Chemie Anorganische Chemie Nichtmetallische Chemie
• Naturwissenschaften Chemie Anorganische Chemie Festkörperchemie
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Chemie Physikalische Chemie Chemische Kristallographie

Inhaltsverzeichnis

I. Heterostructure Formation in Molecular-Beam and Gas-Phase Epitaxy.- Direct Synthesis of Nanostructures in the Germanium-Silicon System by Molecular-Beam Epitaxy.- Heterostructures and Strained Superlattices in the Ge-Si System: Growth, Structure Defects, and Electronic Properties.- Long-Range Stresses and Their Effects on Growth of Epitaxial Films.- Growth of and Defect Formation in CdxHg1-xTe Films During Molecular-Beam Epitaxy.- Structure of Amorphous Nb Oxide Films and Their Crystallization.- II. Growth of Crystals in Low-Temperature and Hydrothermal Solutions.- Morphological Stability of a Linear Step in the Presence of a Mobile Adsorbed Impurity.- Growth Kinetics and Bipyramid-Face Morphology of KDP Crystals.- Growth and Certain Properties of KDP Crystals Affected by pH and Temperature.- KOH-ZrO2-SiO2-H2O Hydrothermal System: Formation of Potassium Zirconosilicates and Crystallochemical Correlations Among Them.- III. Growth of Crystals from the Melt.- Compositions of Congruently Melting Three-Component Solid Solutions Determined by Finding Acnodes on Ternary-System Fusion Surfaces.- Coriolis Force on Melt Convection During Growth of Crystals in a Centrifuge and Under Weightlessness.- Convection-Induced Effects in the Step-Heater Stockbarger Growth of CaF2 Crystals: Growth-Front Shape.- Crystallization Front Structure During Growth of Single Crystals from a Melt in Various Crystallographic Directions.- Growth, Detwinning, and Properties of YBa2Cu3Ox and TmBa2Cu3Ox Single Crystals.