Mertens / Meuris / Heyns | Ultra Clean Processing of Semiconductor Surfaces XII | Buch | 978-3-03835-242-6 | sack.de

Buch, Englisch, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

Mertens / Meuris / Heyns

Ultra Clean Processing of Semiconductor Surfaces XII


Erscheinungsjahr 2014
ISBN: 978-3-03835-242-6
Verlag: Trans Tech Publications

Buch, Englisch, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

ISBN: 978-3-03835-242-6
Verlag: Trans Tech Publications


Collection of selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium. The 71 papers are grouped as follows: Chapter 1: Cleaning for FEOL Applications,Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area, Chapter 3: Wet Etching for FEOL Applications,Chapter 4: Wet Processing of High Aspect Ratio Structures, Chapter 5: Fluid Dynamics, Cleaning Mechanics,Chapter 6: Photo Resist Performance and Rework, Chapter 7: Cleaning for BEOL Interconnect Applications, Chapter 8: Cleaning for 3D Applications, Chapter 9: Contamination Control and AMC,Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells
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Weitere Infos & Material


Preface, Committee and Acknowledgement
Chapter 1: Cleaning for FEOL Applications
Necessity of Cleaning and its Application in Future Memory Devices
Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique
Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces
HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth
Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching
Aluminum Reduction in SC1
Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals
Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition
Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes
Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area
InGaAs (110) Surface Cleaning Using Atomic Hydrogen
Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid
Nanoscale Etching and Reoxidation of InAs
Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers
Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment
Surface Cleaning of Graphene by CO2 Cluster
Chapter 3: Wet Etching for FEOL Applications
Process Control Challenges of Wet Etching Large MEMS Si Cavities
Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions
Advanced Monitoring of TMAH Solution
Effect of Dissolved Oxygen for Advanced Wet Processing
Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping
Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor
Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam
Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution
Nickel Selective Etch for Contacts on Ge Based Devices
Chapter 4: Wet Processing of High Aspect Ratio Structures
Study of Wetting of Nanostructures Using Decoration by Etching
Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region
Freeze Drying of High Aspect Ratio Structures
Chapter 5: Fluid Dynamics, Cleaning Mechanics
Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch
Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process
Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning
Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use
Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation
Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP
Effect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration
Understanding the Formation of Circular Ring Defects in Post-CMP Cleaning
Particle Measurement with a Liquid-Borne Particle Counter: Analytical Figures of Merit
Fluid Flow and Defect Density Considerations when Drying Bumped Wafers Using Spin and Surface Tension Gradient Methods
Characterization of Cavitation in Ultrasonic or Megasonic Irradiated Gas Saturated Solutions Using a Hydrophone
Detection of HO2•/O2•- Radicals Formed in Aqueous Solutions Irradiated with Megasonic Waves Using a Cavitation Threshold (CT) Cell Set-Up
Chapter 6: Photo Resist Performance and Rework
Photo Lithography - Surface Preparation Interactions
Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch
Megasonic Enhanced Photoresist Strip with DiO3
Chapter 7: Cleaning for BEOL Interconnect Applications
Wetting Behavior of Plasma Etch Residue Removal Solutions on Plasma Damaged and Repaired Porous ULK Dielectrics
Effect of Downstream Plasma Treatment on Dissolution of Fluorocarbon Polymer in Organic Solvents
Post Etch Residue Removal and Material Compatibility in BEOL Using Formulated Chemistries
Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning
TiN Hard Mask Cleans with SC1 Solutions, for 64nm Pitch BEOL Patterning
Industrial Challenges of TiN Hard Mask Wet Removal Process for 14nm Technology Node
TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application
Prevention of Unexpected Oxidation of Metal Layer by Removing Hydrogen Peroxide from Ultrapure Water and Diluted Hydrofluoric Acid
Cost-of-Ownership Comparison of Single-Wafer Processes for Stripping Copper Pillar Bump Photomasks
Chapter 8: Cleaning for 3D Applications
The Role of Mass Transfer in Removal of Cross-Linked Sacrificial Layers in 3DI Applications
Scaling the 3D Bumps Pitch from 20 to 10 µm, Focusing on the Wet Cu Seed Etch Process Development
Adhesion Improvement through Plasma Surface Treatments on Palladium Surface
Chapter 9: Contamination Control and AMC
Control of HF Volatile Contamination in FOUP Environment by Advanced Polymers and Clean Gas Purge
FOUP Material Influence on HF Contamination during Queue-Time
Effect of FOUP Atmosphere Control on Process Wafer Integrity in Sub20 nm Device Fabrication
Correlation of Cleaning Conditions and Wafer Out-Gassing
Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing
Collection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS Analysis
Backside and Bevel Contamination Removal
Focus Spot Reduction by Brush Scrubber Cleaning
Upside-Down Residual Sessile Droplet: Watermarks on Wafers Backside
Nuclear Magnetic Resonance Spectroscopy of Trace Organic Impurities Extracted from a Corrosion Inhibitor and a Semiaqueous Residue Remover
Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells
Improvement of Silicon Solar Cell Substrates by Wet-Chemical Oxidation Studied by Surface Photovoltage Measurements
Simplified Cleaning for a-Si:H Passivation of Wafers Bonded to Glass
Investigation of Silicon Saw Damage Removal and Surface Texturing Using KOH for next Generation Silicon Solar Cells
Impact of Fe and Cu Surface Contamination on High Efficiency Solar Cell Processes
Ozone Base Cleaning: Impact on High Efficiency Interdigitated Back Contact Solar Cells
Rapid Determination of Organic Contaminations on Wafer Surfaces
Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment


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