Michael / Ismail Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits

Erscheinungsjahr 2012
ISBN: 978-1-4615-3150-0
Verlag: Springer US
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 211, 190 Seiten, eBook

Reihe: The Springer International Series in Engineering and Computer Science

As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject.

Zielgruppe

Research

Autoren/Hrsg.

Michael, Christopher

Ismail, Mohammed

Inhaltsverzeichnis

1. Introduction.- 1.1 Research Focus.- 1.2 Significance of Research.- 2. Survey of Statistical Modeling and Simulation Techniques.- 2.1 Statistical Parameter Modeling...- 2.2 Statistical Simulation.- 3. Statistical MOS Model.- 3.1 Modeling Obstacles.- 3.2 Parameter Mismatch Variance Model.- 3.3 Distance Dependence of Parameter Variance.- 3.4 Parameter Correlations: Principal Component Analysis.- 3.5 Model Integration: Statistical Parameter Model.- 3.6 Model Calculation Example.- 4. Experimental Process Characterization for MOS Statistical Mode.- 4.1 The BSIM Model...- 4.2 BSIM Parameter Extraction.- 4.3 Test Chip Description.- 4.4 Process Characterization Data.….- 5. CAD Implementation of the SMOS Model • 8.- 5.1 APLAC - An Object-Oriented Circuit Simulator.- 5.2 Simulation Framework…..- 5.3 Model Calculation Programs.(MCPs)...- 5.4 Measurement and Simulation of Test Circuits..- 6. Statistical CAD of Analog MOS Circuits..- 6.1 Basic Analog Sub-Circuits.… §.- 6.2 Operational Amplifier...- 7. Applications of the SMOS Model to Digital Integrated Circuits.- 7.1 Introduction.- 7.2 CMOS Inverter.- 7.3 Dynamic Sense Amplifier…..- 8. Conclusion and Future Work.- 8.1 Potential Uses for the SMOS Model.- Appendix page.- A mcp - spice implementation of smos.- B aplac input files.- Bibliograph.- Y index.