Buch, Englisch, 728 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1350 g
Buch, Englisch, 728 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1350 g
ISBN: 978-3-0357-2760-9
Verlag: Trans Tech Publications
Autoren/Hrsg.
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Weitere Infos & Material
Preface
Chapter 1: Material Growth and Wafer Manufacturing
Models for Impurity Incorporation during Vapor-Phase Epitaxy
Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration
Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality
The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
Advances in 200 mm 4H SiC Wafer Development and Production
Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates
Effect of N and Al Doping on 3C-SiC Stacking Faults
Impact of N Doping on 3C-SiC Defects
Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding
In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry
Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride
Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues
Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy
Review of Sublimation Growth of SiC Bulk Crystals
Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200°C for Photonic Applications
SiC Mass Commercialization: Present Status and Barriers to Overcome
150 mm SiC Engineered Substrates for High-Voltage Power Devices
Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition
Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material
Opening through 200 mm Silicon Carbide Epitaxy
Chapter 2: Processing
Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry
Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers
Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC
Polish Scratch Simulation vs. Polish Tool Type
Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics
Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment
The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation
Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing
A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion
Multiscale Simulations of Plasma Etching in Silicon Carbide Structures
Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC
Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation
Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing
Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies
Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
Chapter 3: Characterization, Modelling and Defect Engineering
Identification of High Resolution Transient Thermal Network Model for Power Module Packages
Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends
Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method
Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation
Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection
Automatic Image Analysis of Stackingfault
Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures
Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis
Microscopic Evaluation of Al2O3/p-Type Diamond (111) Interfaces Using Scanning Nonlinear Dielectric Microscopy
Measurement of Dislocation D
