E-Book, Englisch, Band 43, 264 Seiten, eBook
Mönch Electronic Properties of Semiconductor Interfaces
2004
ISBN: 978-3-662-06945-5
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
E-Book, Englisch, Band 43, 264 Seiten, eBook
Reihe: Springer Series in Surface Sciences
ISBN: 978-3-662-06945-5
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Zielgruppe
Research
Autoren/Hrsg.
Weitere Infos & Material
Introduction.- Depletion Layer.- Determination of Barrier Heights and Offsets.- Laterally Inhomogeneous Schottky Contacts.- The IFIGS-and-Electronegativity Theory.- The MIGS-and-Electronegativity Concept: Experiment and Theory.- First-Principles Calculations of Barrier Heights and Valence-Band Offsets.- Temperature and Pressure Effects.- Barrier Heights and Extrinsic Interface Defects.- Extrinsic Interface Dipoles.- Ohmic Contacts.
