Gettering and Defect Engineering in Semiconductor Technology XV

Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK
Erscheinungsjahr 2014
ISBN: 978-3-03795-540-6
Verlag: Trans Tech Publications

Sonstiges, Englisch, Band Volumes 205-206, 520 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Solid State Phenomena

The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Autoren/Hrsg.

Murphy, J.D.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and EliminationIron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect InteractionsExternal and Internal Gettering of Interstitial Iron in Silicon for Solar CellsPrecipitation of Interstitial Iron in Multicrystalline SiliconDirect Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar CellsOn the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal EffectivenessDefect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar CellsCharacterisation of Dislocation-Content in Multicrystalline-Silicon WafersThe Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline SiliconAnalysis of Inhomogeneous Dislocation Distribution in Multicrystalline SiProperties of Strong Luminescence at 0.93 eV in Solar Grade Silicon10 cm Diameter Mono Cast Si Growth and its CharacterizationCharacterization of Residual Strain in Si Ingots Grown by the Seed-Cast MethodOverview and Latest Developments in Photoconductance Lifetime Measurements in SiliconEfficiency-Limiting Recombination in Multicrystalline Silicon Solar CellsPhotoluminescence Imaging of Silicon BricksInline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and InterfacesTransition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIBA Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si CharacterizationProperties of Point Defects in Silicon: New Results after a Long-Time DebateFast and Slow Vacancies in SiliconTheoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si CrystalsFirst Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si NanocrystalsThe Trivacancy and Trivacancy-Oxygen Family of Defects in SiliconMonoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow DonorsLight-Element Impurities and their Reactions in Multicrystalline SiIsotope-Dependent Phonon Trapping at Defects in SemiconductorsFormation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type SiliconInteractions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption StudyPL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-SiInfrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich CaseCalibration of IR Absorbance in Highly Nitrogen Doped SiliconDislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different AtmospheresNew Results on the Electrical Activity of 3d-Transition Metal Impurities in SiliconMetastable CuVO* Complex in SiliconDeep Energy Levels of Platinum-Hydrogen Complexes in SiliconAssociation of FeB Pairs under IlluminationProximity Gettering of Slow Diffuser ContaminantsInfluence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon WafersPolycrystalline Silicon Gettering Layers with Controlled Residual StressCharge Carrier Transport along Grain Boundaries in SiliconImpact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic StatesFabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated SiliconMultiple Proton Implantations into Silicon: A Combined EBIC and SRP StudyPositron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P CrystalsRadiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-SiEffect of Hydrogen for Preservation of Reconstructed SurfacesKinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon WafersElectric Field Effect Surface Passivation for Silicon Solar CellsEffect of Ultrasonic Treatment on the Defect Structure of the Si-SiO2 SystemCharacterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser PulsesSmoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing ChamberAnisotropy of the Porous Layer Formation Rate in Silicon with Various Acceptor ConcentrationsQueue Time Sensitivity Analysis MethodologyLuminescence from Germanium and Germanium on SiliconHigh n-Type Doping in Ge for Optical Gain and LasingReduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI SubstrateStudy of Photovoltage Decays in Nanostructured Ge/SiVacancy-Related Defects in Ge Doped with TinFirst-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge CrystalsProduction and Annealing of Defects in Proton-Irradiated n-GeInfluences of Charged Dislocations on Performance of III-V Compound Semiconductor FinFETsUnstable Luminescence and "Memory Effect" in Nitrides Irradiated by Electron BeamSilicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance StudyDefect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film TransistorsPoint Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode CharacteristicsInvestigation of Point Defects Modification in Silicon Dioxide by CathodoluminescenceSynthesis and Light Absorption Mechanism in Si or Ge Nanoclusters for Photovoltaics ApplicationsHomo- and Hetero-Structure Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cones FormationElectrical and Optical Characterisation of Silicon Nanocrystals Embedded in SiCElectronic States and Optical Gap of Phosphorus-Doped Silicon Nanocrystals Embedded in a Silica Host MatrixPhotoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different TemperaturesDefects Related to Sb-Mediated Ge Quantum DotsZnO Nanoparticle Formation in Si by Co-Implantation of Zn+ and O+ Ions