Complete Guide to Semiconductor Devices

2. Auflage 2002
ISBN: 978-0-471-20240-0
Verlag: WILEY

Buch, Englisch, 742 Seiten, Format (B × H): 158 mm x 243 mm, Gewicht: 1179 g

Reihe: Wiley - IEEE

Das systematische Handbuch des Halbleiter-Bauelemente jetzt in zweiter Auflage! 67 Bauelementtypen ist jeweils ein eigenes Kapitel gewidmet; mehr als 180 Varianten dieser Typen werden behandelt. Jedes Kapitel beantwortet Ihnen alle grundlegenden Fragen: Wann wurde das Bauelement erfunden und von wem? Wie sind Struktur und Funktionsweise, wie wird es hergestellt? Was sind die wichtigsten Anwendungsgebiete?

Autoren/Hrsg.

Ng, Kwok K.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Preface.

Preface to the First Edition.

Introduction.

DIODES I: RECTIFIERS.

p-n Junction Diode.

p-i-n Diode.

Schottky-Barrier Diode.

Planar-Doped-Barrier (PDB) Diode.

Isotype Heterojunction.

DIODES II: NEGATIVE RESISTANCE N-SHAPED.

Tunnel Diode.

Transferred-Electron Device (TED).

Resonant-Tunneling Diode.

Resonant-Interband-Tunneling (RIT) Diode.

Single-Barrier Tunnel Diode.

Single-Barrier Tunnel Diode.

Single-Barrier Interband-Tunneling Diode.

Real-Space-Transfer (RST) Diode.

DIODES III: NEGATIVE RESISTANCE S-SHAPED.

Metal-Insulator-Semiconductor Switch (MISS).

Planar-Doped-Barrier (PDB) Switch.

Amorphous Threshold Switch.

Heterostructure Hot-Electron Diode (HHED).

DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME.

Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode.

Barrier-Injection Transit-Time (BARITT) Diode.

RESISTIVE AND CAPACITIVE DEVICES.

Resistor.

Metal-Oxide-Semiconductor (MOS) Capacitor.

Charge-Coupled Device (CCD).

TRANSISTORS I: FIELD-EFFECT.

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

Junction Field-Effect Transistor (JFET).

Metal-Semiconductor Field-Effect Transistor (MESFET).

Modulation-Doped Field-Effect Transistor (MODFET).

Permeable-Base Transistor.

Static-Induction Transistor (SIT).

Real-Space-Transfer (RST) Transistor.

Planar-Doped Field-Effect Transistor.

Surface-Tunnel Transistor.

Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET).

Stark-Effect Transistor.

Velocity-Modulation Transistor (VMT).

TRANSISTOR II: POTENTIAL-EFFECT.

Bipolar Transistor.

Tunneling Hot-Electron-Transfer Amplifier (THETA).

Metal-Base Transistor.

Bipolar Inversion-Channel Field-Effect Transistor (BICFET).

Tunnel-Emitter Transistor (TETRAN).

Planar-Doped-Barrier (PDB) Transistor.

Heterojunction Hot-Electron Transistor (HHET).

Induced-Base Transistor.

Resonant-Tunneling Bipolar Transistor (RTBT/RBT).

Resonant-Tunneling Hot-Electron Transistor (RHET).

Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT).

Spin-Valve Transistor.

NONVOLATILE MEMORIES.

Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor.

Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor.

THYRISTORS AND POWER DEVICES.

Silicon-Controlled Rectifier (SCR).

Insulated-Gate Bipolar Transistor (IGBT).

Static-Induction Thyristor (SIThy).

Unijunction Transistor.

PHOTONICS I: LIGHT SOURCES.

Light-Emitting Diode (LED).

Injection Laser.

PHOTONICS II: PHOTODETECTORS.

Photoconductor.

p-i-n Photodiode.

Schottky-Barrier Photodiode.

Charge-Coupled Image Sensor (CCIS).

Avalanche Photodiode (APD).

Phototransistor.

Metal-Smiconductor-Metal (MSM) Photodetector.

Quantum-Well Infrared Photodetector (QWIP).

Quantum-Dot Infrared Photodetector (QDIP).

Blocked-Impurity-Band (BIB) Photodetector.

Negative-Electron-Affinity (NEA) Photocathode.

Photon-Drag Detector.

PHOTONICS III: BISTABLE OPTICAL DEVICES.

Self-Electrooptic-Effect Device (SEED).

Bistable Etalon.

PHOTONICS IV: OTHER DEVICES.

Solar Cell.

Electroabsorption Modulator.

Thermistor.

Hall Plate.

Strain Gauge (Gage).

Interdigital Transducer (IDT).

Ion-Sensitive Field-Effect Transistor (ISFET).

Appendix A: Selected Nonsemiconductor Devices.

Appendix B: Physical Phenomena.

Appendix C: General Applications of Device Groups.

Appendix D: Physical Properties.

Appendix E: Background Information.

Index.

Über Autor(innen)

KWOK K. NG received his PhD from Columbia University in 1979 and his BS degree from Rutgers University in 1975, both in electrical engineering. Since 1980, he has been a Technical Manager with Agere Systems (formerly Bell Laboratories of AT&T and then of Lucent Technologies) at the Murray Hill location in New Jersey. His activities include Si MOS devices, SiGe heterojunction bipolar transistors, and recently compound-semiconductor high-speed and high-power devices. Dr. Ng has held positions as editor of IEEE Electron Device Letters and as liaison to IEEE Press.