Semiconductor Memories and Systems

Erscheinungsjahr 2022
ISBN: 978-0-12-820758-1
Verlag: William Andrew Publishing

Buch, Englisch, 362 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 1000 g

Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies.

Autoren/Hrsg.

Pellizzer, Fabio

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

1. Historical review of semiconductor memories
2. The usage of Memory in current systems
3. SRAM technology status and perspectives
4. DRAM circuit and process technology
5. NAND Flash technology status and perspectives
6. Embedded memory solutions: charge storagge based, resistive and magnetic
7. The evolving role of storage-class memory in servers and large systems
8. 3DXpoint fundamentals
9. Other Emerging Memories
10. Computing with nonvolatile memories for artificial intelligence

Über Autor(innen)

Pellizzer, Fabio
Fabio Pellizzer received his M.S. degree in Electronic Engineering in 1996 from the University of Padova, Italy, with a thesis on characterization and reliability of thin gate oxides. In 1998 he joined the Central R&D department of STMicroelectronics in Agrate Brianza (Italy) and worked on the development of several generations of NOR Flash memories, with a focus on gate oxides reliability. Since 2002 he has been in charge of the process development for phase change memories based on chalcogenide materials. Since March 2008 he joined Numonyx as Phase-Change Memory manager in the R&D Technology Development. In May 2011, he joined Micron Technology, where he is responsible for the development of new memory technologies. He is now a Distinguished Member of Technical Staff and Cell Development manager for 3DXPoint technology in Boise (USA). He has authored more than 60 publications on international journals and books and several invited talks at international conferences. He holds more than 130 granted US and European patents on phase-change memories and chalcogenide materials (related to process integration, algorithms and design solutions).