Sonstiges, Englisch, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-841-1
Verlag: Trans Tech Publications
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.
Autoren/Hrsg.
Weitere Infos & Material
SiC Seeded Boule GrowthHigh Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor TransportSublimation Growth of 50mm Diameter SiC WafersExperimental Investigation of 4H-SiC Bulk Crystal GrowthStep Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation MethodInfluence of the Growth Direction and Polytype on the Stacking Fault Generation in a-SiCX-Ray Section Topographic Investigation of the Growth Process of SiC CrystalsPhysical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk CrystalsThe Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC GrowthDefect Formation Mechanism of Bulk SiCEnlargement of SiC Crystals: Defect Formation at the InterfacesImpurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiCOptically Transparent 6H-Silicon CarbideModelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental VerificationModeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum ContainerA Coupled Finite Element Model for the Sublimation Growth of SiCStudies on SiC Liquid Phase Crystallization as Technique for SiC Bulk GrowthDissolution and Growth of Silicon Carbide Crystals in Melt-SolutionsSublimation Growth of Bulk ?-SiC Crystals on (100) and (111) ?-SiC SubstratesSiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE ReactorGrowth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage ApplicationsGrowth and Characterisation of SiC Power Device MaterialGrowth and Characterisation of Thick SiC Epilayers by High Temperature CVDGrowth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor DepositionImpurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle DependenceNitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiCBoron Compensation of 6H Silicon CarbideCVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal PlaneHomoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD ReactorGrowth of 4H and 6H SiC Trenches and Around Stripe MesasPlanar 6H-SiC p-n Junctions Prepared by Selective Epitaxial GrowthEpitaxial Growth of SiC on a-SiC Using Si2Cl6+C3H8+H2 SystemHigh Growth Rate of a-SiC by Sublimation EpitaxyThe Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy TechniqueDomain Occurance in SiC Epitaxial Layers Grown by SublimationEpitaxy of High Quality SiC Layers by CSTWetting Properties and Interfacial Energies in Liquid Phase Growth of a-SiCHigh Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase EpitaxyThick Film SiC Epitaxy for 'Filling Up' MicropipesA New Radiation Heated 4 Inch LPCVD System for ?-SiC HeteroepitaxyEpitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-DisilabutaneGrowth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature DependenceCVD Growth Mechanism of 3C-SiC on Si SubstratesGrowth of Epitaxial Cubic SiC Thin Films Using Single Source PrecursorsCrystallinity of 3C-SiC Films Grown on Si SubstratesEffects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) SubstratesThe Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si SubstrateStudy of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEMSurface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si SubstratesEffect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVDMechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in SiliconFormation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) SiliconFabrication of 3C-SiC on SiO2 Structures Using Wafer Bonding TechniquesGrowth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of ?-SiC on Si(100) SubstrateGermanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon SubstratesGas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary SystemHeteroepitaxial Growth of SiC on Si by Gas Source MBE with SilacyclobutaneHeteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVDFormation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBEGrowth of SiC Layers on (111) Si by Solid Source Molecular Beam EpitaxyImproved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBEObservation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBEElectronic Properties of SiC Polytypes and HeterostructuresBand Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC PolytypesCalculated Density of States and Carrier Concentration in 4H- and 6H-SiCTheoretical Studies on Defects in SiCAn ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking FaultsCalculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon CarbideComparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon CarbideCalculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiCThe Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-StructuresPressure-Dependent Dynamical and Dielectric Properties of GaN and AlNTheoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaNElectronic States of BC2N Heterodiamond (111) SuperlatticesFrom Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si1-xCx PhasesLarge Unit Cell Superstructures on Hexagonal SiC-Sufaces Studied by LEED, AES and STMSurface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial GrowthElectronic and Atomic Structure of the C-Terminated 6H-SiC SurfaceDeposition of Cs on Graphitized 4H-SiC SurfacesTheory of Si-Rich SiC Surfaces: Consequences for Epitaxial GrowthPolarity Dependent Step Bunching and Structure of Hexagonal SiC SurfacesCollective Surface Excitations in 3C-SiC(100)FTIR-ATR Analysis of SiC(000-1) and SiC(0001) SurfacesPolytype and Surface Characterization of Silicon Carbide Thin FilmsCharacterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiCAFM Study of In Situ Etching of 4H and 6H SiC SubstratesSurface Morphology Improvement of SiC Epitaxy by Sacrificial OxidationThe Formation of Super-Disolcation/Micropipe Complexes in 6H-SiCHigh Resolution Photoemission Study of the 6H-SiC/SiO2 InterfaceCombined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the ?-SiC(001) c(4x2) SurfaceAngle-Resolved Photoemission Study of the ?-SiC(100)-(2x1)-SurfaceSelf-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide SurfaceHigh Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO2/?-SiC(100)3x2 Interface CompositionRaman Investigation of Stress Relaxation at the 3C-SiC/Si InterfaceExtended Defects in SiC and GaN SemiconductorsDefect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon FacesTransmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiCThe Origin of Triangular Surface Defects in 4H-SiC CVD EpilayersGaseous Etching for Characterization of Structural Defects in Silicon Carbide Single CrystalsEquilibrium Growth Morphologies of SiC PolytypesExperimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single CrystalsStructural Characterization of SiC Crystals Grown by Physical Vapor TransportInvestigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray DiffractionSite Identification of 6H-SiC Using RBS/Channeling TechniqueStructural Characterization of 3C-SiC Epitaxially Grown on Si-On-InsulatorElectronic Properties of Doped SiC at Elevated Temperatures Studied by Raman ScatteringOptical Properties of Silicon Carbide: Some Recent DevelopmentsBoron Four Particle Acceptor Bound Exciton Complex in 4H SiCPhosphorus Four Particle Donor Bound Exciton Complex in 6H SiCSome Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon CarbideThe Neutral Silicon Vacancy in 6H and 4H SiCBound Exciton Recombination in Electron Irradiated 4H-SiCCharacterization of Deep Levels in SiC by Photoluminescence Spectroscopy and MappingTime Resolved PL Study of Multi Bound Excitons in 3C SiCChanges in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial StressDII Revisited in an Modern Guise - 6H and 4H SiCNear Band-Gap Emission in V-Implanted and Annealed 4H-SiCPhotoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen IonsLuminescence Properties of Er Implanted Polycrystalline 3C SiCMeasurement of High Field Electron Transport in Silicon CarbideIonization Rates and Critical Fields in 4H SiC Junction DevicesMeasurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine TeslaElectrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 KMonitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay TechniqueDepth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport ParametersEvaluation of Auger Recombination Rate in 4H-SiCGround States of the Ionized Isoelectronic Ti Acceptor in SiCRadiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiCDeep Levels in SiC:V by High Temperature Transport MeasurementsDeep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient SpectroscopyOxygen-Related Defect Centers in 4H Silicon CarbideElectrical Characterization of the Gallium Acceptor in 4H- and 6H-SiCObservation of Metastable Defect in Electron Irradiated 6H-SiCElectrically Active Defects in n-Type 4H- and 6H-SiCPhonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance SpectroscopyElectrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa DiodesHigh-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition ProcessesElectronic Structure of Acceptors in Silicon CarbideHigh-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiCOn the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?X-Band ENDOR of Boron and Beryllium Acceptors in Silicon CarbideOptically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiCChromium in 4H and 6H SiC: Photoluminescence and Zeeman StudiesElectron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide CrystalsCharacterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin ResonanceESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-ElectronsDistribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas SupplyExperimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiCDeformation of Monocrystalline 6H-SiCMeasurement of the Thermal Conductivity of Thin ?-SiC Films between 80 K and 600 KSpatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth ConditionsThe Measurement of the Thickness of Thin SiC Layers on SiliconThickness Contour Mapping of SiC Epi-Films on SiC SubstratesInfrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC SubstratesCathodoluminescence of Defect Regions in SiC Epi-FilmsContactless Measurement of the Thermal Conductivity of Thin SiC LayersCross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC LayersA Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS CapacitorsRaman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si SubstratesConductivity Control of SiC by In-Situ Doping and Ion ImplantationIncorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition EpitaxyCoimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiCElectrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantationEffects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical TechniquesEnergy Order Effect of Aluminium Multiple Implantation in 6H-SiCImplantation of Al and B Acceptors into Alpha-SiC and pn Junction DiodesElectrical Activation of B Implant in 6H-SiCPost-Implantation Annealing of Aluminium in 6H-SiCThe Characterization of SiC Hot-Implanted with Ga +Ion Implantation Doping in SiC and its Device ApplicationsHot-Implantation of Phosphorus Ions into 6H-SiCRaman, Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiCInvestigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PASAnalysis of Aluminium Ion Implantation Damage into 6H-SiC EpilayersStoichiometric Disturbances in Ion Implanted Silicon Carbide6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman ScatteringStudy of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron AnnihilationEffect of Hot Isostatic Press Annealing for Ion-Implanted Silicon CarbideIon Beam Synthesis: A Novel Method of Producing (SiC)1-x(AIN)x LayersA Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiCDeuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiCSilicon Carbide on Insulator Formation by the Smart CUT? ProcessDelamination of Thin Layers in H+ Implanted Silicon CarbideMetal Disilicide Contacts to 6H-SiCFormation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser ProcessesLaser Alloying for Ohmic Contacts on SiC at Room TemperatureThermostable Ohmic Contacts on p-Type SiCOhmic Contacts to p-Type SiC with Improved Thermal StabilityA High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400?C in AirPhase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiCThermal Stability of Sputtered TiN as Metal Gate on 4H-SiCSchottky Barrier Height in Metal-SiC Contact - New Approach to ModellingNanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission MicroscopyPhysical and Electrical Characterization of WN Schottky Contacts on 4H-SiCSputter-Etching as a Surface Preparation Technique for Schottky ContactsMechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas MixturesFast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3Inductively Coupled Plasma Etching of SiC for Power Switching Device FabricationEtching Kinetics of a-SiC Single Crystals by Molten KOHDeep States in SiO2/p-Type 4H-SiC InterfaceEffects of the Cooling-Off Condition on the Oxidation Process in 6H-SiCEffect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiCLow Interface State Density Oxides on P-Type SiCObservation of Carbon Clusters at the 4H-SiC/SiO2 InterfaceInterface State Density at Implanted 6H SiC/SiO2 MOS StructuresElectrical Properties and Reliability of Vapor Jet Deposited Oxide on SiCImproving SiO2 Grown on P-Type 4H-SiC by NO AnnealingRapid Anodic Oxidation of 6H-SiCComparison of SiO2 and AIN as Gate Dielectric for SiC MOS StructuresMetal-Nitride-Semiconductor Capacitors on 6H-SiCSurface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVDBehaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated TemperaturesRecent Advances in SiC Power DevicesVital Issues for SiC Power DevicesSilicon Carbide High Frequency DevicesWide Dynamic Range RF Mixers Using Wide-Bandgap SemiconductorsElectrothermal Simulation of 4H-SiC Power DevicesHigh Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering MethodEffect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier DiodesHigh Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiCHigh Voltage 4H SiC Rectifiers Using Pt and Ni MetallizationMedici Simulation of 6H-SiC Oxide Ramp Profile Schottky StructureA Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiCCharacterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating WafersSilicon Carbide MESFET's for High-Power S-Band ApplicationsTemperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET'sVoltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation StudyEvaluating the Three Common SiC Polytypes for MESFET ApplicationsEffect of Device Temperature on RF FET Power DensityTheoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power AmplificationMESFETs and MOSFETs on Hydrogen-Terminated Diamond SurfacesOn the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-EquilibriumCharge Pumping Measurements on SiC MOSFETs1400 V 4H-SiC Power MOSFETsHigh Voltage Planar 6H-SiC ACCUFETInversion Layer Mobility in SiC MOSFETsDependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETsHigh-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiCImpact Ionization in 6H-SiC MOSFETsInterface States and Field-Effect Mobility in 6H-SiC MOS TransistorsGeneration Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-RaysDifferences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal OxidationFast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical ResultsComputer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity LevelsNanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching PropertiesReverse Recovery and Avalanche Injection in High Voltage SiC PIN DiodesComparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar DiodesBeryllium-Implanted 6H-SiC P+N JunctionsInvestigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-OnSiC Merged p-n/Schottky Rectifiers for High Voltage ApplicationsJunction Barrier Schottky Diodes in 4H-SiC and 6H-SiCCarrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform4H-SiC Gate Turn-Off (GTO) Thyristor DevelopmentPunch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETsHigh Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiCSiC Surface Engineering for High Voltage JFET ApplicationsElectrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction TransistorStudies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC MaterialSiC-Based Schottky Diode Gas SensorsElectrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky DiodesHigh Temperature Piezoresistive ?-SiC-on-SOI Pressure Sensor for Combustion EnginesGrowth of Bulk GaN by Sublimation MethodGrowth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) SubstratesHeteroepitaxy of Group III Nitrides for Device ApplicationsHVPE GaN and AIGaN 'Substrates' for HomoepitaxySome Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer QualityFormation of GaN Nano-Column Structure by NitridationGrowth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour DepositionGrowth of Aluminium Nitride with Superior Optical and Morphological PropertiesMonomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPEEpitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer LayersOptical Properties of GaN Films Grown on SiC/SiModeling of the Incorporation of Aluminium in Ga1-xAlxM (M=As or N) Alloys Grown by MOCVDMOCVD Growth and Properties of InGaN/GaN Multi-Quantum WellsMBE Growth of III-V Nitride Thin Films and Quantum Well StructuresSurface Reconstruction and As Surfactant Effects on MBE-Grown GaN EpilayersAn Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaNElaboration of III-V Nitrides Quantum Dots in Molecular Beam EpitaxyGrowth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam EpitaxyMolecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayersEffect of Elastic Strain on Growth of Ternary Group-III Nitride CompoundsInfluence of Activated Nitrogen on Plasma Assisted MBE Growth of GaNSurface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy StudyGrowth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular EpitaxyLow Temperature Growth of Gallium Nitride on Quartz and Sapphire SubstratesSTM Observation of Initial Nitridation Process of Ga on Si SubstratesNitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN LayersMagnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B SubstratesMBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High TemperaturesReactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin FilmsMagnetron Sputter Epitaxy of Gallium Nitride on (0001) SapphireStructural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam EpitaxyTransmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor DepositionAlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiCThe Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire SubstratesSurface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase EpitaxyStructural Characterisation of GaN Layers on Sapphire Grown by MOCVDExcitonic Fine Structure and High Density Effects in GaNOptical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic OrientationsFree Exciton Recombination in Tensile Strained GaN Grown on GaAsExciton Dynamics in Homoepitaxial GaNExciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3Excitonic Quantum Efficiency of GaNOptical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum WellsLasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural PropertiesOptical Properties of InGaN/GaN Multiple Quantum WellsTime-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum WellsNon-Linear Exciton Spectroscopy of GaN/AlGaN Quantum WellsQuantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL SpectraOptical Characterization of InGaN Layers and GaN/InGaN/GaN Double HeterostructuresOptical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire SubstratesRoom Temperature Photoluminescence Linewidth versus Material Quality of GaNResidual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence DataAre there any Shallow Acceptors in GaN?Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced PressureCharacterization of GaN Quantum Dots on AlGaN/SiC Substrate Using CathodoluminescenceCathodoluminescence of Cubic GaN EpilayersOptical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) SubstratesAnalysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface LayersEffect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaNCharacterization of GaN Epilayers Grown on Sapphire and SiC SubstratesPhotoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence MicroscopeRaman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaNMicro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAsSurface Polariton Raman Spectroscopy in Cubic GaN Epitaxial LayersElectrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor DepositionOptical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with PhotoluminescenceA Two-Band Analysis of Electrical Transport in n-Type GaN EpilayersElectrical Characterization of the AlN/Si(111) SystemElectrical and Optical Properties of Highly Strained GaN EpilayersInvestigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaNNanometre Scale Reactive Ion Etching of GaN EpilayersTi/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace AnnealingSchottky Barrier Modification on n-GaN Using a Shallow p-Type ImplantElectrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire SubstratesNitride-Based Emitters on SiC SubstratesBlue-U.V. Homojunction GaN LEDs Fabricated by MOVPEElectroluminescence of GaN pn DiodesUltraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum WellsAn Investigation of Breakdown Mechanisms in Al(GaN) MSM PhotodetectorsHigh Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) StructuresSubstrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC SubstratesTwo-Dimensional Electronic Transport in AlGaN/GaN HeterostructuresAnnealed Si1-xCx Emitter Silicon Heterojunction Bipolar TransistorsUltraviolet Excitonic Laser Action at Room Temperature in ZnO Nanocrystalline Epitaxial FilmsDouble Heterostructure Based on ZnO and MgxZn1-xO
