Sonstiges, Englisch, 860 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 860 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-873-2
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters CPCI-S (WoS).
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Large Diameter, Low Defect Silicon Carbide Boule GrowthSiC Single Crystal Growth by Sublimation: Experimental and Numerical ResultsImpact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth ProcessDefect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary ConditionsProgress in 4H-SiC Bulk GrowthStability Criteria for 4H-SiC Bulk GrowthGrowth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single CrystalsInvestigation of a PVT SiC-Growth Set-up Modified by an Additional Gas FlowMass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk CrystalsSome Aspects of Sublimation Growth of SiC IngotsGrowth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely MethodStudy of Boron Incorporation During PVT Growth of p-type SiC CrystalsFeatures of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor TransportVirtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and OptimizationCoupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT MethodNumerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk CrystalsCrystal Growth of 15R-SiC and Various Polytype SubstratesMicropipe Filling by the Sublimation Close Space TechniqueMechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation MethodChemical Vapor Deposition of SiC by the Temperature Oscillation MethodAluminium-Silicon as a Melt for the Low Temperature Growth of SiC CrystalsEpitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow OrientationsInfluence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall ReactorEnlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using SimulationModeling Analysis of SiC CVD in a Planetary ReactorInfluence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc ReactorAb Initio Study of Silicon Carbide: Bulk and Surface StructuresSiC Defect Density Reduction by Epitaxy on Porous SurfacesEffect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction InvestigationsGaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVDLow Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon SubstratesCharacterization of 4H-SiC Epilayers Grown at a High Deposition RateControl of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) SubstratesSurface Morphology of 4H-SiC Inclined towards and Grown by APCVD Using the Si2Cl6+C3H8 SystemGrowth of 3C-SiC Using Off-Oriented 6H-SiC SubstratesSiC Polytype Transformation on the Growth SurfaceImprovement of the 3C-SiC/Si Interface by Flash Lamp AnnealingHow to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) SubstratesGrowth of 3C-SiC on Si by Low Temperature CVDGrowth of SiC on Si(100) by Low-Pressure MOVPEThe Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization ProcessA Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on SiSelective Deposition of 3C-SiC Epitaxially Grown on SOI SubtratesCarbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)The Influence of Ge on the SiC Nucleation on (111)Si SurfacesIn Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) SurfacesStructural and Optical Properties of SiC Films Deposited on Si by DC Magnetron SputteringLaser Crystallization of Amorphous SiC Thin Films on GlassTEM Investigation of Si Implanted Natural DiamondSurface Reconstruction on SiC(0001) and SiC(000-1): Atomic Structure and Potential Application for Oxidation, Stacking and GrowthInterplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiCRoom Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3Comparison of HF and Ozone Treated SiC SurfacesPreparation and Characterization of Hydrogen Terminated 6H-SiCPolytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive IdentificationSurface Abstraction Reactions at Experimental Temperatures; a Theoretical Study of 4H-SiC(0001)Combined Scanning Tunneling Microscopy and Photoemission Studies of the ?-SiC(100) c(4x2) Surface ReconstructionInvestigation of the SiC Surface after Nitrogen Plasma TreatmentMorphology of Sublimation Grown 6H-SiC(000-1) SurfacesGermanium on SiC(0001): Surface Structure and NanocrystalsOrigin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiCIon-Irradiation Effect on the Ni/SiC Interface ReactionAnalysis of Strain and Defect Formation of Low-Dimensional Structures in SiCSource Material Related Distribution of Defects in 6H-SiC Single CrystalsCharacterization of 2 Inch SiC Wafers Made by the Sublimation MethodIon Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical MethodsEffects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger PrintingX-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon CarbideX-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiCHigh-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial LayersDefect Analysis of SiC Sublimation Growth by the In-Situ X-Ray TopographyCrystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesA Simple Non-Destructive Technique to Detect Micropipes in Silicon CarbideMicropipe and Macrodefect Healing in SiC Crystals during Liquid Phase ProcessingMicropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw DislocationsGrowth Evolution of Dislocation Loops in Ion Implanted 4H-SiCLattice Parameter Measurements of 3C-SiC Thin Films Grown on 6H-SiC(0001) Substrate CrystalsSelf Diffusion in SiC: the Role of Intrinsic Point DefectsModeling of Boron Diffusion in Silicon CarbideQuantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiCOptical Characterization of SiC Materials: Bulk and Implanted LayersLine Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiCMicro-Raman and Photoluminescence Study on n-type 6H-SiCLow-Frequency Vibrational Spectroscopy in SiC PolytypesFree Carrier Diffusion in 4H-SiCValence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption SpectroscopyZeeman Effect of D1 Bound Exciton in 4H-SiCAs-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiCCharacterization of SiC:P Prepared by Nuclear Transmutation Due to NeutronsPresence of Hydrogen in SiCInvestigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiCDifferentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence MicroscopyInfrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiCInvestigation of Electroluminescence across 4H-SiC p+/n-/n+ Structures Using Optical Emission MicroscopyDefects Characterization in SiC by Scanning Photoluminescence SpectroscopyAbsorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiCLow Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely MethodIntrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding EnergyEpitaxial Growth and Properties of SiC Layers Grown on a-SiC(0001) by Solid-Source MBE: A Photoluminescence StudyPrediction of Optical Properties of Si and Ge Dots in SiCInvestigation of Variable Incidence Angle Spectroscopic Ellipsometry for Determination of Below Band Gap Uniaxial Dielectric FunctionTheory of Hydrogen in Silicon CarbideDissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiCProton Irradiation Induced Defects in 4H-SiCIntrinsic Defect Complexes in a-SiC: the Formation of Antisite PairsGeneration and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiCImplantation Temperature Dependent Deep Level Defects in 4H-SiCBoron in SiC: Structure and KineticsDeep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiCBoron Centers in 4H-SiCOxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 AmbientElectrical Activity of Isolated Oxygen Defects in SiCBeryllium-Related Defect Centers in 4H-SiCBand Gap States of Cr in the Lower Part of the SiC Band GapTantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep LevelsShallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current TechniqueIntrinsic Mobility of Conduction Electrons in 4H-SiCA Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC PolytypesThermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag EffectDonor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect MeasurementsIntrinsic Defects in Silicon Carbide PolytypesRadiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic ResonanceIntrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement ThresholdEPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiCEPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiCEPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiCThe Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiCIdentification of Iron and Nickel in 6H-SiC by Electron Paramagnetic ResonanceCalculated Positron Annihilation Parameters for Defects in SiCAnnealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation StudyRecent Progress in SiC Epitaxial Growth and Device Processing TechnologyDoping of Silicon Carbide by Ion ImplantationNeutron Irradiation of 4H SiCTechniques for Depth Profiling of Dopants in 4H-SiCGrowth of d-Doped SiC Epitaxial LayersEffect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction TransistorHigh Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF AnnealingEnhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon IonsHigh Dose Implantation in 6H-SiCPrecipitate Formation in Heavily Al-Doped 4H-SiC LayersFlash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiCStructural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC LayersChanneling Measurements of Ion Implantation Damage in 4H-SiCThe Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose EffectsFormation of Large Area Al Contacts on 6H- and 4H-SiC SubstratesRu Schottky Barrier Contacts to n- and p-type 6H-SiCStability of Molybdenum Schottky Contact to Silicon CarbideEffects of Thermal Annealing on Cu/6H-SiC Schottky PropertiesElectrochemical Characterization of p-Type Hexagonal SiCA Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power DevicesInterface States of SiO2/SiC on (11-20) and (0001) Si FacesInterface Properties of MOS Structures Formed on 4H-SiC C(000-1) FaceSteam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiCRole of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiCInfluence of Post-Oxidation Process on the MOS Interface and MOSFETs PropertiesObservation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron MicroscopyRemote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiCIndications for Nitrogen-Assisted Removal of Carbon from SiO2-SiC InterfaceDissolution Mechanism of the Carbon Islands at the SiO2/SiC InterfaceDependence of Wet Oxidation on the Defect Density in 3C-SiCSiC Microwave Power Devices1700 V SiC Schottky Diodes Scaled to 25 ATemperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiCA High Performance JBS Rectifier - Design ConsiderationsDesign and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring TerminationImprovements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen AnnealingInfluence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiCA Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer LayersNoise Behavior of 4H-SiC MESFETs at Low Drain VoltageDouble Implanted Power MESFET Technology in 4H-SiCSource Resistance Analysis of SiC-MESFETDesign and Implementation of RESURF MOSFETs in 4H-SiCComparison of Super-Junction Structures in 4H-SiC and Si for High Voltage ApplicationsSiC Junction Control, an Alternative to MOS Control High Voltage Switching DevicesLong Term Operation of 4.5kV PiN and 2.5kV JBS DiodesPlanar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiCSilicon Carbide Zener DiodesCharacteristics of Epitaxial and Implanted N-Base 4H-SiC GTO ThyristorsTurn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO ThyristorSiC Based Gas Sensors and their ApplicationsHigh Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control ApplicationsCharged Particle Detection Properties of Epitaxial 4H-SiC Schottky DiodesThin Heavily Compensated 6H-SiC Epilayers as Nuclear Particle DetectorsThe Role of Threading Dislocations in the Physical Properties of GaN and its AlloysAlN Crystal Growth by Sublimation TechniqueInvestigation of the Structure of 2H-AlN Films on Si(001) SubstratesFormation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN HeterostructuresLuminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-TransportFrom Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical CharacterizationElectron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and AnnealingCharacterization of GaAlN/GaN Superlattice HeterostructuresIII-Nitride Power Devices - Good Results and Great ExpectationsHigh-Performance Surface-Channel Diamond Field-Effect Transistors
