Defect Interaction and Clustering in Semiconductors

Erscheinungsjahr 2001
ISBN: 978-3-0357-0924-7
Verlag: Trans Tech Publications

Sonstiges, Englisch, 370 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may ? if not carefully controlled? induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Autoren/Hrsg.

Pizzini, Sergio

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Chemistry and Physics of Defect Interaction in SemiconductorsInteraction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical EffectsInteractions of Impurities with Dislocations: Mechanical EffectsFrom Point to Extended Defects in Silicon: A Theoretical StudyInteraction of Hydrogen with Impurities and Defects in SemiconductorsDefects Involving Oxygen in Crystalline SiliconUltrasound Stimulated Defect Reactions in SemiconductorsInteraction of Small Molecules with Silicon SurfacesCharacterisation of Hydrogen and Hydrogen-Related Centres in Crystalline Silicon by Magnetic-Resonance Spectroscopy