Polycrystalline Semiconductors IV

Erscheinungsjahr 1996
ISBN: 978-3-03859-981-4
Verlag: Trans Tech Publications

Sonstiges, Englisch, 656 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

The present volume covers many aspects of semiconductors, over the wide structural range from nano- to large-grained crystalline. Scientists working on polycrystalline semiconductors, with various chemistries, here review fundamental research, technology and applications.

Autoren/Hrsg.

Pizzini, S.

Strunk, H.P.

Werner, J.H.

Inhaltsverzeichnis

Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold DiffusionFormation of Electrical Activity of Dislocations in Si during Plastic DeformationElectronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary SegregationAtomic Simulation Study of Gettering and Passivation in Polycrystalline SemiconductorsThe Switching Effects at Grain Boundaries Spontaneously Nucleating at the Crystallization Front of Shaped SiliconMicrocharacterization of Polycrystalline Semiconductors by Scanning Electron Microscopy in Electron Beam Induced Current ModeBeam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and CapabilitiesScanning Deep Level Transient Spectroscopy Measurements of Extended Defects in SiliconLifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial ResolutionOn the Electrical Activity of Fe-Contaminated Silicon BicrystalsMicrodefects in Polycrystalline SiliconInvestigations for the Detection of Microdefects in Cast Multicrystalline SiliconDislocation-Related Absorption, Photoluminescence and Birefringence in Deformed n-ZnSe CrystalsTight-Binding Total Energy Calculation for Fe, Co and Ni in SiliconPolycrystalline Semiconductors: Structure-Property RelationshipsInfluence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon WafersReconstruction of the Recombination Centre Distribution in Dislocation Impurity Atmosphere in SiTransmission Electron Microscopy Studies of Lattice-Mismatched Semiconductor Heterostructures Used for Integrated Optoelectronic DevicesElectrical and Structural Properties of Solution Grown Silicon Layers on Polycrystalline Silicon SubstratesPreparation of Low Temperature Polysilicon Films with SiH4 and SiF4 Gas MixturesStructural Studies of Annealing Effects on Semi-Insulating Polycrystalline Layers Obtained by Using DisilaneGrowth of n-Type Microcrystalline Silicon at Different Plasma Excitation FrequenciesOn the Nanostructure of Hydrogenated SiliconTime Resolved Reflectivity Studies of Phase Transitions in Polycrystalline Si Induced by Excimer Laser IrradiationCharacterization of Low Pressure Chemical Vapor Deposited Polysilicon Using EllipsometryCorrelation between the Hydrogen Bonding Configurations in Amorphous Sputtered Silicon and the Crystallized Material MicrostructureGrowth and Defect Formation in Thin Ge and Si0.8Ge0.2 Layers Ion Beam Sputter Deposited on Si(001)Microstructure Influence on the First Stage of the Oxidation Process in Polycrystalline SiGe LayersSurface Defect States of Crystallites in Sputtered Amorphous Silicon Filmsn-Type Polydrystalline Silicon for Luminescent Porous Silicon FilmsStructural Characterization of Poly-SiC Grown on SiO2/Si by Metalorganic Chemical Vapor DepositionPhotoluminescence from Nanocrystalline Silicon-Amorphous Silica Composite Materials: Changing the Color and Decay TimeNanocrystalline Silicon: From Disordered Insulator to Dirty MetalOptical, Electrical and Structural Studies of Microcrystallized Sputtered SiliconStructure and Optical Properties of Hydrogenated Silicon Films Prepared by Plasma Enhanced Chemical Vapour DepositionGrowth of Polycrystalline Silicon Films at High Deposition Rate and Low Temperature by Hot Wire Chemical Vapour DepositionGrain Boundaries and Grain Size Distributions in Nanocrystalline Diamond Films Derived from Fullerene PrecursorsCathodoluminescence Microscopy of Square Facets in Chemial Vapour Deposited Diamond Films and its Use in Stress DeterminationTransformations in Si1-xGex:H Films on SiO2 SubstratesModelling of Specular Reflection Infrared Spectra of Oxide Films for Microstructural AnalysisChemical Composition and Characterization of the Si/C Interface in Poly-Si Thin Films on Graphite SubstratesPhase Transitions during the Deposition of Polycrystalline Iron Pyrite (FeS2) - Layers by Low-Pressure Metalorganic Chemical Vapor DepositionDistribution of Defects in Polycrytalline Chalcopyrite Thin FilmsNoble Transparent Semiconductor: MgIn2O4Electronic Properties of CuxS-ZnS Heterostructure in Zinc Sulphide LuminophorsQuantum Properties of Two-Dimensional Electron Gas in the Inversion Layer of InSb and (Hg1-xCdxTe) BicrystalsGrowth and Electrical Properties of Reactively Sputtered WSx Thin FilmsOptical and Electrical Properties of Iron Disilicide with Different Degree of Structural PerfectionComposition Dependent Optical Properties of Polycrystalline CuInSe2 Thin FilmsImprovement of the Electrical Properties of WSe2 Layers by Iodine TreatmentElectron Beam Induced Current Imaging of Silicon Oxide Damage Due to Reactive Ion EtchingMonte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline SemiconductorsElectronic Properties of Defect Levels Investigated by Photocurrent Noise in Polycrystalline Cadmium CompoundsExperimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon FilmsCarrier Transport at Silicon and Germanium Grain Boundaries Enriched by Impurities1/f Noise Transformation that Accompanies the Trimming of Polycrystalline Silicon LayersInvestigation of the Low-Frequency Electrical Noise in Grain Boundaries and Polycrystalline Silicon FilmsSelective Photoconductivity in n-Type CdMnTe:GaSemiconducting Gas Sensors: Basic Science and Empirical ApproachesInfluence of the Technological Parameters on the Mechanical Properties of Thick Epipolysilicon Layers for Micromechanical SensorsThickness Dependence of Coloration of Anodic Tungsten Oxide Films for Hydrogen DetectionPreparation, Micromorphology and Stability of Tin Dioxide Thin FilmsMicrostructural Study of Nanocrystalline Semiconducting SnO2 Powders for Sensor ApplicationGrowth and Post Growth Processes of Multicrystalline Silicon for Photovoltaic UseModern Technologies for Polycrystalline Silicon Solar CellsMicrostructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold CruciblePolycrystalline Silicon Solar Cells: Improvements in Efficiency through Hydrogen PassivationAbout a Novel Gettering Procedure for Multicrystalline Silicon SamplesHydrogen Ion-Implantation Induced Gettering Effects in Polycrystalline SiliconShunts in n+p-Junction Solar Cells Fabricated on Multicrystalline Cast SiliconCharacterization of Local Shunts in Multicrystalline Siicon Solar Cells by p-n Mesa StructuresTheory of Grain Boundary Effects upon Single Junction and Multijunction Polycrystalline Silicon Thin Film Solar CellsPolycrystalline Silicon on Glass Substrates for Thin Film Solar CellsModelling of Thin Polycrystalline Silicon Solar Cells on Low Temperature SubstratesElectron-Beam Induced Current Profiles for Thin Film Heterojunction AnalysisOxygen in Solution Grown CdS Films for Thin Film Solar CellsRelations between Texture and Electrical Parameters of Thin Polycrystalline Zinc Oxide FilmsInterface Charge Separation Processes in TiO2-Based Solar CellsStructure Organization of Fullerene Layers for Photovoltaic DevicesCompensation Doping of Polysilicon Films for Stable Integrated Circuit ResistorsPhysical Properties of Polysilicon Diodes Derived from a Smart Power TechnologyRealization of Power Polysilicon Diodes on Indium-Tin-Oxide Substrates for Holographic Commutation MatrixManipulating the Electrical and Optical Properties of Polycrystalline ZnO Based Thin FilmsAnalysis of Hot-Carrier Effects, 'Kink' Effect and Low Frequency Noise in Polycrystalline Silicon Thin-Film TransistorsThermal and Field-Induced Generation Mechanisms in Polysilicon Thin Film Transistors: A Comparison between n-Channel and p-Channel DevicesThin Polycrystalline Silicon Films Annealed at 950?C: Structural and Electrical Properties and Application to Thin Film TransistorsDeposition and Characterisation of Polycrystalline Silicon for Low Temperature Thin Film Transistor FabricationNovel Polysilicon Thin Film Transistor with Buffer OxideLeakage Currents in Poly-Si Thin Film Transistors