Popov Disordered Semiconductors Second Edition

Physics and Applications
2. Auflage 2018
ISBN: 978-1-351-58605-4
Verlag: Taylor & Francis
Format: EPUB
Kopierschutz: 0 - No protection

E-Book, Englisch, 340 Seiten

Compared with the first edition, this book takes into account the latest developments of disordered semiconductors and devices. It has new sections on the structure of carbon-based amorphous and nanocomposite films and atomic and electronic structure of organic semiconductors. It also features charge-carrier transport in these materials; chemical modification of the atomic structure of disordered semiconductors; structural, chemical, and phase modification of amorphous diamond-like silicon–carbon films; photovoltaic cells based on silicon hetero-junction technology (SHJT); and organic and hybrid photovoltaic cells.

Zielgruppe

Undergraduate-, graduate-level students, and researches in the fields of electrical and electronic engineering, nano-electronics, material science, and solid state physics.

Autoren/Hrsg.

Popov, Anatoly

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Introduction
Atomic Structure of Disordered Semiconductors
Electronic Structure and Properties of Disordered Semiconductors
Methods for Controlling Properties of Disordered Semiconductors
Preparation Methods of Disordered Semiconductor Films
Optical Information Storage and Transmission Devices
Photoelectric Devices based on Disordered Semiconductors
Electronic Devices based on Disordered Semiconductors

Über Autor(innen)

Anatoly Popov is professor at the Moscow Power Engineering Institute (MPEI), National Research University, Russia. He was awarded a PhD degree in 1973 and a DSc degree in 1984. He joined MPEI in 1985 as a professor and has held the positions of the dean of the electro-technical faculty, the first vice-rector, and the head of the Semiconductor Electronics Department of the institute. He has also been an academic visitor to Fudan University, Shanghai, China, and an invited lecturer to the Samsung Advanced Institute of Technology, South Korea. Prof. Popov is a full member of the Russian Engineering Academy, the Academy of Electrotechnical Science, and the International Telecommunication Academy. He has more than 300 publications and more than 20 innovations in the fields of non-crystalline semiconductor materials and devices to his credit. He is also a winner of the Honored Science Worker of Russia award (2000), the Honored Engineer of Russia award (2000), the Russian President Prize (2002), the Silver Medal of International Academy of Electrotechnical Science (2004), and the Russian Government Prize (2009). His main research interests are atomic structure and physical properties of non-crystalline semiconductors, structural modification of properties of non-crystalline semiconductors, computer simulation of the atomic structure of non-crystalline semiconductors, optical and electrical storage medium based on chalcogenides, nanocomposites and nanostructuring materials, and applications of non-crystalline semiconductors in optical recording and electrical memory.