Disordered Semiconductors

1. Auflage 2011
ISBN: 978-981-4241-76-2
Verlag: Pan Stanford

Buch, Englisch, 201 Seiten, Format (B × H): 178 mm x 254 mm, Gewicht: 622 g

This textbook links characteristic features of atomic and electronic structures of disordered semiconductors to the device design process. It begins with a description of general concepts of disordered semiconductors, their atomic structures, the structure of energy bands, and their defects, as well as their electrical, optical, and photovoltaic properties. Since weak sensitivity to impurities is a distinguishing feature of disordered semiconductors, methods of property control and thin-film preparation methods are the areas of focus. Finally, applications of disordered semiconductors in various devices are considered.

Zielgruppe

Academic and Postgraduate

Autoren/Hrsg.

Popov, Anatoly

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Preface 1. Introduction 1.1 Definition of Disordered State 1.2 Classification of Non-crystalline Systems 1.3 Qualitative and Quantitative Characteristics of Glass-Formation 2. Atomic Structure of Disordered Semiconductors 2.1 Structural Characteristics of Solids 2.2 Short Range and Medium Range Order 2.3 Methods of Investigation of Disordered System Structure 2.4 Simulation of Disordered Material Structure 2.5 Results of Structural Research of Disordered Semiconductors 3.1 Electronic Structure 3.2 Electrical Properties of Disordered Semiconductors 3.3 Optical Properties of Disordered Semiconductors 3.4 Photoelectrical Properties of Disordered Semiconductors 4. Methods for Controlling Properties of Disordered Semiconductors 4.1 Doping of Hydrogenated Amorphous Silicon 4.2 Chemical Modification of Chalcogenide Glassy Semiconductor Film 4.3 Conductivity Type Inversion in Bulk Glassy Chalcogenide 4.4 Structural Modification of Disordered Semiconductors Properties 5. Preparation Methods of Disordered Semiconductor Films 5.1 Technological Distinctions of Chalcogenide Glassy Film Preparation 5.2 Preparation of Hydrogenated Amorphous Silicon Films by Glow Discharge Decomposition Method 5.3 Preparation of B ^ Alloys on the Base of Hydrogenated Amorphous Silicon 5.4 Preparation of Hydrogenated Amorphous Silicon Films by Chemical Vapor Deposition (CVD) Methods 5.5 Preparation of Hydrogenated Amorphous Silicon Films by Radio-frequency Sputtering Method 6. Optical Information Storage and Transmission Devices 6.1 Devices Based on Charge Pattern Recording 6.2 Devices based on Photo-induced Transformations in Chalcogenide Glasses 7. Photoelectric and Electronic Devices Based on Disordered Semiconductors 7.1 Photovoltaic Devices 7.2 Switching and Memory Devices on the Basis of Chalcogenide Alloys 7.3 Silicon Thin Film Transistors Conclusion.

Über Autor(innen)

Anatoly Popov is professor and head of the Semiconductor Electronics Department at the Moscow Power Engineering Institute, Russia.