Advanced Engineering Materials: Properties and Processing Technologies

Erscheinungsjahr 2023
ISBN: 978-3-0364-0328-1
Verlag: Trans Tech Publications

Buch, Englisch, 152 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 400 g

This special edition contains a series of articles on research results in areas of structural metal materials, and materials for applications in opto- and microelectronics and power electronic devices based on silicon carbide. The presented edition will be helpful to many specialists whose activity is related to machinery and the electronic industry.

Autoren/Hrsg.

Quah, Hock Jin

Marek, Juraj

Pobegen, Gregor

Grossner, Ulrike

Liang, Steven Y.

Li, Zongjin

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface
Chapter 1: Properties and Processing Technologies of Structural Metals
Influence of Tool Eccentricity pin Positioning on AA6061 Aluminium Alloy Friction Stir Welds
Cylindrical Billet Size Optimization for Hot Closed-Die Forging of the Upper Ball Joint
Effect of Melting Temperature and Flux on Slag Percentage in Die Casting Process of Zamak3 Alloy
Roughness Test of Aluminum A5052 before and after Forming by SPIF Process
Modelling of Creep Rupture in Grade 92 Steel Using a Microstructure-Type Finite Element Mesh
Ag Powder Production Using Wire Arc Spray Technique
Chapter 2: Optical and Electronic Materials
Using the Rods as Collector and Study of its Effect on Morphology and Uniformity of Nanofibers via Electrospinning
Rapid Thermal Annealing Process Toward Enhancement of ITO Thin Films
Fabrication of PS/Al Nanocomposites as Foils and Evaluation of their Optical Properties
Nearly Zero Ultra-Flattened Dispersion in Octagonal Photonic Crystal Fiber
Impacts of Wafer Doping Type on Structural and Optical Properties of Black Silicon Fabricated by Metal-Assisted Chemical Etching
Ray Tracing of Perovskite Thin Films for Solar Windows
Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth
Chapter 3: Research and Optimisation Devices Based on Silicon Carbide
A Fully Self-Aligned SiC Trench MOSFET with 0.5 µm Channel Pitch
Highly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental Study
Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications
Tailoring the Charge Carrier Lifetime Distribution of 10 kV SiC PiN Diodes by Physical Simulations
10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency
A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM