Gallium Nitride Electronics

1. Auflage. Softcover version of original hardcover Auflage 2008
ISBN: 978-3-642-09098-1
Verlag: Springer

Buch, Englisch, 470 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 848 g

Reihe: Springer Series in Materials Science

covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics.

Zielgruppe

Research

Autoren/Hrsg.

Quay, Rüdiger

Fachgebiete

• Technische Wissenschaften Sonstige Technologien | Angewandte Technik Angewandte Optik
• Technische Wissenschaften Technik Allgemein Physik, Chemie für Ingenieure
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Verbundwerkstoffe

Inhaltsverzeichnis

III-N Materials, and the State-of-the-Art of Devices and Circuits.- Epitaxy for III-N-Based Electronic Devices.- Device Processing Technology.- Device Characterization and Modeling.- Circuit Considerations and III-N Examples.- Reliability Aspects and High-Temperature Operation.- Integration, Thermal Management, and Packaging.- Outlook.

Über Autor(innen)

Rüdiger Quay was born in Köln, Germany, in 1971. He studied physics and economics at the University of Bonn and the RWTH Aachen, where he received his "Diplom" in physics in 1997. In summer 1996 he held a visiting research position at Los Alamos National Laboratory, New Mexico, USA, for his master's thesis. In 1999, he was a visiting researcher at the Beckman Institute, University of Illinois, Urbana Champaign. In 2001 he received the doctoral degree in technical sciences with honors from the Technische Universität Wien, Austria. He has published more than 30 refereed publications and he is one of the authors of the book "Analysis and Simulation of Heterostructure Devices". His scientific interests include RF-semiconductor device and process development, heterostructure device modeling and simulation, and circuit and reliability issues. Rüdiger Quay currently is a research engineer at Fraunhofer Institute for Applied Solid-State Physics (IAF) in Freiburg, Germany, involved in the development and large-signal characterization of high-power and high-speed AlGaN/GaN amplifiers and the development of high-speed InP HBTs for high data rate communication at 80~Gbit/s and beyond.