20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Erscheinungsjahr 2024
ISBN: 978-3-0364-0203-1
Verlag: Trans Tech Publications

Buch, Englisch, 1110 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 2130 g

The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).

Autoren/Hrsg.

Riccio, Michele

Irace, Andrea

Breglio, Giovanni

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface
Chapter 1: Growing and Forming of Layers
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films
Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
Resistivity as a Witness of Local Crystal Growth Conditions
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
4H-SiC Crystal Growth Using Recycled SiC Powder Source
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Chapter 2: Wafers and Substrates
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
HYPREZ Wafering Solutions: A Novel Approach of SiC Wafering Solution
Poly-SiC Characterization and Properties for SmartSiC™
Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization
A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC Wafer
High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils
Dicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF6 Plasma with Metal Masks
Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures
Demonstration of SiC-on-Insulator Substrate with Smart Cut™ Technology for Photonic Applications
A Novel Contactless SiC Wafer Planarization Processing after Mechanical Slicing by Dynamic Thermal Annealing Processes
Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser
In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)
Characterization of Very Thin 3C-SiC Epilayers on Si
Chapter 3: Defects of Solid Semiconductor Structures
Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
The Role of Defects on SiC Device Performance and Ways to Mitigate them
Emission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic Temperatures
SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control
Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations
Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy
Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers
Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy
A Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiC
Practical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer Defects
Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray Topography
High-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in Production
Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering
Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing®
Charge Carrier Capture by Prominent Defect Centers in 4H-SiC
Chapter 4: Formation, Processing and Characteristics of Solid-State Structures
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation
Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors
Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board
TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer
Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems
Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices
Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing
Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters
Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping
Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation
Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide
Modeling the Charging of Gate Oxide under High Electric Field
Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC
Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC
Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C
The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC
Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate
Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing
Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC
Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs
Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs
Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC
Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs
Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs
Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget
Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC
Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization
Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers
Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC
Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling
Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs
Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double