Buch, Englisch, 238 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 540 g
Buch, Englisch, 238 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 540 g
ISBN: 978-3-0364-0632-9
Verlag: Trans Tech Publications
Autoren/Hrsg.
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Weitere Infos & Material
Preface
Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation
TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer
Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems
Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing
Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping
Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide
Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC
Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC
Prediction of Contact Resistance of 4H–SiC by Machine Learning Using Optical Microscope Images after Laser Doping
The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC
Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing
Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC
Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC
Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing
Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers
Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget
Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization
Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC
Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs
Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET
Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices
Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface
Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications
High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2
Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry
Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal
Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask
A Comparison between Different Post Grinding Processes on 4H-SiC Wafers
Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC
High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb= 104s), and High Thermal Stability (= 800 °C)
