Solid-State Power Devices: Circuitry and Characterizations

Erscheinungsjahr 2024
ISBN: 978-3-0364-0633-6
Verlag: Trans Tech Publications

Buch, Englisch, 224 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 520 g

The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.

Autoren/Hrsg.

Riccio, Michele

Irace, Andrea

Breglio, Giovanni

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

Preface
3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts
Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
Normally-Off 1200V Silicon Carbide JFET Diode with Low VF
On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mO 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
Comparison of Si CMOS and SiC CMOS Operational Amplifiers
Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes