Solid-State Power Devices: Operational Reliability and Parameters' Stability

Erscheinungsjahr 2024
ISBN: 978-3-0364-0647-3
Verlag: Trans Tech Publications

Buch, Englisch, 134 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 370 g

The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.

Autoren/Hrsg.

Riccio, Michele

Irace, Andrea

Breglio, Giovanni

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Zuverlässigkeitstechnik

Inhaltsverzeichnis

Preface
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors
Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
UIS Ruggedness of Parallel 4H-SiC MOSFETs
The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs