Compact Models for Integrated Circuit Design

Conventional Transistors and Beyond
1. Auflage 2015
ISBN: 978-1-4822-4066-5
Verlag: CRC Press

Buch, Englisch, 545 Seiten, Format (B × H): 161 mm x 240 mm, Gewicht: 980 g

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices.

Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:

- Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models

- Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models

- Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis

- Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices

- Includes exercise problems at the end of each chapter and extensive references at the end of the book

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

Autoren/Hrsg.

Saha, Samar K.

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Introduction to Compact Models. Review of Basic Device Physics. Metal-Oxide-Semiconductor System. Large Geometry MOSFET Compact Models. Compact Models for Small Geometry MOSFETs. MOSFET Capacitance Models. Compact MOSFET Models for RF Applications. Modeling Process Variability in Scaled MOSFETs. Compact Models for Ultrathin Body FETs. Beyond-CMOS Transistor Models: Tunnel FETs. Bipolar Junction Transistor Compact Models. Compact Model Library for Circuit Simulation.

Über Autor(innen)

Samar K. Saha holds a Ph.D from Gauhati University, and an M.S.EM from Stanford University. He is currently adjunct professor at Santa Clara University, technical advisor at Ultrasolar Technology, distinguished lecturer and 2016–2017 president of the IEEE Electron Devices Society, and fellow of the Institution of Engineering and Technology. He previously worked for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta, and served as a faculty member at Southern Illinois University at Carbondale, Auburn University, University of Nevada at Las Vegas, and the University of Colorado at Colorado Springs.