Compound Semiconductors 1998

Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998
1. Auflage 1999
ISBN: 978-0-7503-0611-9
Verlag: Taylor & Francis Ltd

Buch, Englisch, 892 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 1497 g

Reihe: Institute of Physics Conference Series

Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

Zielgruppe

Professional

Autoren/Hrsg.

Sakaki, H

Yokoyama, N

Woo, J.C.

Harayama, Y

Fachgebiete

• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Chemie Anorganische Chemie Festkörperchemie
• Naturwissenschaften Physik Thermodynamik Physik der Zustandsübergänge

Inhaltsverzeichnis

Review papers (3 papers). Optoelectronic devices and OEICs (10 papers). Long-wavelength and intersubband transition (7 papers). Optical properties (7 papers). Field-effect transistors: FETs and HEMTs (16 papers). Hetero-bipolar transistors: HBTs (6 papers). Semiconductor device physics (12 papers). Quantum wires (6 papers). Quantum dots (13 papers). Material growth (12 papers). Material characterization (12 papers). Material growth and characterization: wide gap and nitride (17 papers). Doping and processing (13 papers). Late news (11 papers). Author and subject index.

Über Autor(innen)

H. Sakaki, J. C. Woo, N. Yokoyama and Y. Harayama