Buch, Englisch, 382 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 454 g
Technology Advancements
Buch, Englisch, 382 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 454 g
ISBN: 978-1-138-07705-8
Verlag: Taylor & Francis Ltd
Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components—access transistor, storage capacitor, and peripherals—DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs.
Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.
Topics Include:
- DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors
- Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations
- How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research
- Various types of leakages and power consumption reduction methods in active and sleep mode
- Various types of SAs and yield enhancement techniques employing ECC and redundancy
A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.
Zielgruppe
Electrical/electronics engineers, semiconductor circuit designers, chemical/mechanical engineers, semiconductor process development engineers, and circuit designers; senior undergraduate and graduate students studying digital circuit design.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Random Access Memories. DRAM Cell Development. DRAM Technologies. Advanced DRAM Cell Transistors. Storage Capacitor Enhancement Techniques. Advanced DRAM Technologies. Leakages in DRAMs. Memory Peripheral Circuits.
