Buch, Englisch, 1042 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1870 g
ICSCRM 2017
Buch, Englisch, 1042 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1870 g
ISBN: 978-3-0357-1145-5
Verlag: Trans Tech Publications
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Preface
Chapter 1: Bulk and Epitaxial Growth
1.1: Bulk Growth
SEMI Standards for SiC Wafers
Optimization of 150 mm 4H SiC Substrate Crystal Quality
Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
Resistivity Increase in 6H-SiC Crystal Grown with Simple Modification in PVT Process
The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique
Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si
Dislocation Behavior in Bulk Crystals Grown by TSSG Method
Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC
Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal
Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent
Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC
Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method
1.2: Epitaxial Growth
Status and Trends in Epitaxy and Defects
99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD
Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool
Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor
Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor
Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition
Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool
Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode
Hot Filament CVD Growth of 4H-SiC Epitaxial Layers
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed
Chapter 2: Defects, Material Studies and Characterization
2.1: Extended and Point Defects, Impurities
Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations
Defects and Polytype Instabilities
Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation
Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers
Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
Origin Analysis and Elimination o
